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HV GaN HEMT
| Part number | Configur ation |
Package | VDS max (V) |
RDS(on)_typ (mΩ) |
RDS(on) max (mΩ) |
QG (nC) |
Qoss (nC) |
ID max (A) |
IDPuls max (A) |
Models | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|
| INN650D140A | Single | DFN 8X8 | 650 | 106 | 140 | 3.5 | 33 | 17 | 32 | available |
|
| INN650DA140A | Single | DFN 5X6 | 650 | 106 | 140 | 3.5 | 33 | 17 | 32 | on-request |
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| INN650N140A | Single | WAFER | 650 | 106 | 140 | 3.5 | 33 | 17 | 32 | on-request |
|
| INN650D240A | Single | DFN 8X8 | 650 | 165 | 240 | 2 | 21 | 12 | 18 | on-request |
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| INN650DA240A | Single | DFN 5×6 | 650 | 165 | 240 | 2 | 21 | 12 | 18 | available |
|
| INN650N240A | Single | WAFER | 650 | 165 | 240 | 2 | 21 | 12 | 18 | on-request |
|
| INN650DA500A | Single | DFN 5X6 | 650 | 365 | 500 | 1.3 | 10.5 | 7 | 9 | available |
|
| INN650N500A | Single | WAFER | 650 | 365 | 500 | 1.3 | 10.5 | 7 | 9 | on-request |
|
| INN650N05 （old P/N） |
Single | WAFER | 650 | 620 | 800 | 0.7 | 5 | 2 | 5 | available |
|
| INN650DA150A | Single | DFN 5X6 | 650 | 106 | 150 | 3.5 | 33 | 17 | 32 | on-request | Contact us |
| INN650D150A | Single | DFN 8X8 | 650 | 106 | 150 | 3.5 | 33 | 17 | 32 | available | Contact us |
| INN650N150A | Single | WAFER | 650 | 106 | 150 | 3.5 | 33 | 17 | 32 | on-request | Contact us |
| INN650DA260A | Single | DFN 5X6 | 650 | 165 | 260 | 2 | 21 | 14 | 18 | on-request | Contact us |
| INN650D260A | Single | DFN 8X8 | 650 | 165 | 260 | 2 | 21 | 14 | 18 | available | Contact us |
| INN650N260A | Single | WAFER | 650 | 165 | 260 | 2 | 21 | 14 | 18 | on-request | Contact us |
| INN650DA04 （old P/N） |
Single | DFN 5X6 | 650 | 365 | 480 | 1.3 | 10.5 | 7 | 9 | on-request | Contact us |
| INN650N04 （old P/N） |
Single | WAFER | 650 | 360 | 480 | 1.3 | 10 | 7 | 9 | on-request | Contact us |
LV GaN HEMT
| Part number | Configur ation |
Package | VDS max (V) |
RDS(on)_typ (mΩ) |
RDS(on) max (mΩ) |
QG (nC) |
Qoss (nC) |
ID max (A) |
IDPuls max (A) |
Models | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|
| INN40W08 （old P/N） |
Bidirection | WLCSP 2X2 | 40 | 5.5 | 7.8 | 12.7 | 9 | 15 | 100 | available |
|
| INN060W070A* | Single | WLCSP 2.51×1.51 | 60 | 6 | 7 | 5.2 | 22 | 16 | 110 | available | Contact us |
| INN100W08 （old P/N） |
Single | WLCSP 1.5×0.99 | 100 | 36 | 47 | 1.4 | 6.7 | 4 | 50 | available |
|
| INN100W14 （old P/N） |
Dual | WLCSP 1.58×3.58 | 100 | 19 | 25 | 2.75 | 13.5 | 7 | 90 | available |
|
| INN100W12* （old P/N） |
Single | WLCSP 2.51×1.51 | 100 | 6 | 7 | 5.2 | 22 | 16 | 110 | available | Contact us |
| INN150LA070A* | Single | LGA 2.2×3.2 | 150 | 5.6 | 7 | 7.6 | 46.8 | 28 | 120 | available | Contact us |
*Sampling - Qualification on-going.
Part Number Naming
Design Support
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Application Notes
Here you will find Innoscience’s application notes on how to use InnoGaNTM transistors in your application.
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In the table below, you can find device models that describe the typical electrical behavior of InnoGaN devices.
At present, Innoscience provides four model files: LTspice, Pspice, SIMetrix, and Spectre.
We have models available for several of our products and we can quickly develop models for other products upon customer request.Part number Configuration Package VDS max(V) RDS(on)_typ(mΩ) RDS(on) max(mΩ) QG(nC) Qoss(nC) ID max(A) IDPuls max(A) Models INN40W08 Bidirection WLCSP 2X2 40 5.5 7.8 12.7 9 15 100 click here INN060W070A* Single WLCSP 2.51X1.51 60 6 7 5.2 22 16 110 click here INN100W08 Single WLCSP 1.5X0.99 100 36 47 1.4 6.7 4 50 click here INN100W14 Dual WLCSP 1.58*3.58 100 19 25 2.75 13.5 7 90 click here INN100W12* Single WLCSP 2.51X1.51 100 6 7 5.2 22 16 110 click here INN150LA070A* Single LGA 2.2X3.2 150 5.6 7 7.6 46.8 28 120 click here INN650D140A Single DFN 8X8 650 106 140 3.5 33 17 32 click here INN650DA240A Single DFN 5X6 650 165 240 2 21 12 18 click here INN650DA500A Single DFN 5X6 650 365 500 1.3 10.5 7 9 click here INN650N05 Single WAFER 650 620 800 0.7 5 2 5 click here INN650D150A Single DFN 8X8 650 106 150 3.5 33 17 32 click here INN650DA260A Single DFN 5X6 650 165 260 2 21 14 18 click here -
Demo Board
Here you will find the technical documentation related to Innoscience’s demo boards.
Innoscience can also assist you in developing your system solution with InnoGaN devices by designing and developing demo board(s) for your application(s).
Type
Demo model
Picture
Specifications
Topology
AC-DC（HV）
DB-PD33V2
33W/1C
QR flyback
DB-PD33V3
33W/(A+C)
QR flyback
DB-PD65V2
65W/1C
QR flyback
DB-PD65V4
65W/(A+2C)
QR flyback + buck
DB-PD65V5
65W/(A+2C)
ACF + buck
DB-PD100V2
100W/(2A+2C)
Boost PFC+ QR flyback +buck
DB-PD120V2
120W/1C
Boost PFC+ACF
DB-LED200V1
200W/(LED Driver)
Boost PFC+LLC
DB-PD200V2
200W/(2A+3C)
Boost PFC+LLC+buck
Type
Demo model
Picture
Specifications
Topology
DC-DC (LV)
300W 48V DC/DC module
300W/48V
Full bridge LLC
300W 1/8 brick power module
300W/12V
Hard switch full bridge
100W car notebook Charger
20V/5A
Buck-Boost
90W 1.2MHz car charger
15V/6A
Sync Buck
Lidar (LV)
Dual channel lidar
30A/1.4ns
Lidar
Charging protection (LV)
Overvoltage protection board
8A max
Charge pump-OVP
Gate Drivers/Controllers
GaN transistors need optimized gate drivers / controllers to exploit their full potential. Below you can find a list of gate drivers/controllers typically used to drive InnoGaN transistors.
Innoscience with its partners can also assist you in developing a specific gate driver or controller for your specific application.
If you are a design house, we are open to work with you in developing specific solutions by using available or customized InnoGaN devices for a specific application or customer.
|
Part number |
VDS_max (V) |
RDS(on)_typ(mΩ)/ |
QG (nC) |
ID max (A) |
Gate Driver/Controller IC |
|---|---|---|---|---|---|
|
INN650D140A INN650D150A |
650 |
106/140 115/150 |
3.5 3.5 |
17 17 |
On Semi - NCP1342 (QR) Joulwatt - JW1515H (QR) Southchip - SC3021C (QR) Meraki -MK2697G (QR) TI - UCC28056 (PFC) On Semi - NCP1622 (PFC) On Semi - NCP1937 (PFC+QR) NXP - TEA2017AT (PFC+LLC) MPS - HR1211 (PFC+LLC) On Semi - NCP51530/NCP51820 (Half Bridge) Heyday - HEY1011 |
|
INN650DA140A INN650DA150A |
650 |
106/140 115/150 |
3.5 3.5 |
17 17 |
|
|
INN650D240A INN650D260A |
650 |
165/240 165/260 |
2 2 |
12 14 |
|
|
INN650DA240A INN650DA260A |
650 |
166/240 166/260 |
2 2 |
12 14 |
|
|
INN650DA500A |
650 |
500 |
1.3 |
7 |
On Semi - NCP1342 (QR) Joulwatt - JW1515H (QR) Southchip -SC3021C (QR) Meraki - MK2697G (QR) |
|
IN100W12 |
100 |
7/6 |
5.2 |
16 |
Monolithic Power Systems - MP8699B uPI Semi – 1966e Monolithic Power Systems- MPQ1918 Texas Instruments - LMG1205 |
|
INN100LA070A |
150 | 7/5.6 | 7.6 | 28 | Texas Instruments - LMG1210
MinDCet - MDC901 |
|
INN40W08 |
40 | 7.8 | 12.7 | 15 | AW32280CSR,
Southchip - SC8571 Nuvoltatech - NU2205 |
Work With Us
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Original Equipment Manufacture (OEM), system integrators and tier-1
You can develop your system solution(s) by using InnoGaN device. We assure excellent performance, reliability, support, security of supply, large capacity and lowest prices.
We can also assist you in developing your system solution with InnoGaN devices as well as we can also customize InnoGaN devices towards your specifications.You can develop your system(s) by using InnoGaN device. Please check our product list to find the InnoGaN device suitable for your application(s) and the associated gate driver/controller.
Innoscience can also assist you in developing your system solution with InnoGaN devices by providing device samples, available demo boards or designing and developing demo board(s) for your application(s).
You don’t find what you need? We can also customize InnoGaN design towards your specifications.
We have an established approach to develop customized solutions: once we narrow down together the specifications, we can design InnoGaN devices towards your specifications. We provide engineering samples within 3 to 6 months and, afterwards, we are ready for mass production with qualified devices within 6 months.
Overall, we assure excellent performance, reliability, security of supply, large capacity and lowest prices thanks to our large volume capabilities, 8-inch wafer size and advanced high-throughput manufacturing tools.
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Design House
As a design house, you can use InnoGaN device to develop gate drivers, controller, boards for specific applications etc... We can also become a partner for specific applications or customer needs.
As a design house, you can use InnoGaN device to develop boards or gate driver/controller for specific applications. If needed, our engineers will be happy to support you.
We can also become a partner for specific application or customer needs.
For instance, you can develop a specific gate driver/controller for an application. Once you have developed a gate driver/controller for InnoGaN, you can co-package and commercialize your gate driver together with InnoGaN transistors. We can also assist you in the co-packaging part and discuss the best path for commercialization.
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Others
At Innoscience we believe in collaboration. Please reach us to explore your needs, what we can do together and what Innoscence can do for you. We all want GaN technology to be successful and widespread in the market!
Where To Buy
InnoGaN technology are available worldwide via our local representative who will be happy to support you.
Please select your region below to find your local representative to discuss your needs, a possible collaboration or directly buy InnoGaN device or demo boards.
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Innoscience Europe NV.
Philipssite 5 bus 1, 3001, Leuven, Belgium
Dr. Denis Marcon
denismarcon@innoscience.com
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Innoscience Korea Inc.
T-Tower 1818, Yangji-ro 21 Beon-gil, Gwangmyeong-si, Gyeonggi-do, 14345, Korea
KE Hong
kehong@innoscience.com
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Innoscience Shenzhen
37-36F, Building 1, No. 385 Huide Mansion, Mintang Road, Longhua District, Shenzhen
Chris Ke 柯善勇
chriske@innoscience.com
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