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INN150FQ070A

150V Enhancement-mode GaN Power Transistor.

1. Datasheet

GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCQFN with 4.0 mm x 6.0 mm package size.

1.1 Features

GaN-on-Silicon E-mode HEMT technology
Industry Application
Very low gate charge
Ultra-low on resistance
Very small footprint

1.2 Applications

High frequency DC-DC converter
Solar Systems optimizers and microinverters
PD Charger and PSU Synchronous Rectification
Telecom Power Supply
Motor driver

2. Reliability Tests

Platform (S150E2.0I)
Product (INN150FQ070A)
Test Items	Test Conditions	Sample Size (Unit x Lot)	#Fail	Result
HTRB	T=150°C, VD=150V, 168hrs	77 x 1	0 Fail	Pass
HTGB	T=150°C, VG=5.5V, 168hrs	77 x 1	0 Fail	Pass
TC	-55 to +150°C, Air, 1000Cys	77 x 3	0 Fail	Pass
HBM	All Pins	3 x 1	0 Fail	Class 1B
CDM	All Pins	3 x 1	0 Fail	Class C3

Parameter	Value
V_DS,max	150V
R_DS(on),max @ V_G = 5 V	7mΩ
Q_G,typ @ V_DD = 75 V	13nC
I_{DS, Pulse}	160A
Qoss@ Vds =75V	75nC

Downloads

Datasheet

Product Reliability Report

SPICE model