HV GaN HEMT
Part number Configuration Package VDS max
(V)
RDS(on)_typ
(mΩ)
RDS(on) max
(mΩ)
QG
(nC)
Qoss
(nC)
ID max
(A)
IDPuls max
(A)
Models
INS1001DE Single Driver DFN 3X3 / / / / / / / /
INS2001FQ HB Driver FCQFN 3X3 / / / / / / / /
INS2001W HB Driver WLCSP 1.6X1.6 / / / / / / / /
ISG6102 Single QFN 6X8 700 150 210 / 22.5 8 16 /
ISG6103 Single QFN 6X8 700 230 320 / 18.2 5 10 /
ISG6106QA Single QFN 6X8 700 100 140 / 36.6 12 24 /
ISG6107QA Single QFN 6X8 700 150 210 / 22.5 8 16 /
ISG6108QA Single QFN 6X8 700 230 320 / 18.2 5 10 /
ISG6109QA Single QFN 6X8 700 320 450 / 13.7 4 8 /
INN650TA030AH Single TOLL 650 26 34 16 227 60 100 /
INN650TA050AH Single TOLL 650 38 50 12.5 150 40 84 /
INN650TA070AH Single TOLL 650 53 70 8.5 94.7 26 60 /
INN700DA140C Single DFN5X6 700 106 140 3.5 33 17 32 /
INN700DA190B Single DFN5X6 700 138 190 2.8 24.5 11.5 20.5 /
INN700DA240B Single DFN5X6 700 165 240 2 21 10 18 /
INN700DA350B Single DFN5X6 700 270 350 1.5 13 6 10 /
INN700DA480B Single DFN5X6 700 365 480 1.3 10.5 5 9 /
INN700DA600B Single DFN5X6 700 470 600 0.7 7.3 3.3 6 /
INN700DC140C Single DFN5X6 700 106 140 3.5 33 17 32 /
INN700DC190C Single DFN5X6 700 138 190 2.8 24.5 12 20.5 /
INN700DC240C Single DFN5X6 700 165 240 2 21 10 18 /
INN650D070AH Single DFN 8X8 650 53 70 8.5 94.7 26 60 /
INN650D080BS Single DFN 8X8 650 60 80 6.2 60 29 58 /
INN700D140C Single DFN8X8 700 106 140 3.5 33 17 32 /
INN700D190B Single DFN8X8 700 138 190 2.8 24.5 11.5 20.5 /
INN700D190C Single DFN8X8 700 138 190 2.8 24.5 11.5 20.5 /
INN700D240B Single DFN8X8 700 165 240 2 21 10 18 /
INN700D240C Single DFN8X8 700 165 240 2 21 10 18 /
INN700D350B Single DFN8X8 700 270 350 1.5 13 6 10 /
INN700TH140C Single TO220 700 106 140 3.5 33 17 32 /
INN700TH190B Single TO220 700 138 190 2.8 24.5 11.5 20.5 /
INN700TH240B Single TO220 700 165 240 2 21 10 18 /
INN700TH350B Single TO220 700 270 350 1.5 13 6 10 /
INN700TH480B Single TO220 700 365 480 1.3 10.5 5 9 /
INN700TJ140C Single TO220F 700 106 140 3.5 33 10 32 /
INN700TJ190B Single TO220F 700 138 190 2.8 24.5 8 20.5 /
INN700TJ190C Single TO220F 700 138 190 2.8 24.5 8 20.5 /
INN700TJ240B Single TO220F 700 165 240 2 21 7 18 /
INN700TJ240C Single TO220F 700 165 240 2 21 7 18 /
INN700TJ350B Single TO220F 700 270 350 1.5 13 5 10 /
INN700TK140C Single TO252 700 106 140 3.5 33 17 32 /
INN700TK190B Single TO252 700 138 190 2.8 24.5 11.5 20.5 /
INN700TK190C Single TO252 700 138 190 2.8 24.5 11.5 20.5 /
INN700TK240B Single TO252 700 165 240 2 21 10 18 /
INN700TK240C Single TO252 700 165 240 2 21 10 18 /
INN700TK350B Single TO252 700 270 350 1.5 13 6 10 /
INN700TK480B Single TO252 700 365 480 1.3 10.5 5 9 /
INN700TK600B Single TO252 700 470 600 0.7 7.3 3.3 6 /
INN650DA140A Single DFN 5X6 650 106 140 3.5 33 17 32 /
INN650DA190A Single DFN 5X6 650 138 190 2.8 24.5 11.5 20.5 /
INN650DA240A Single DFN 5×6 650 165 240 2 21 10 18 /
INN650DA350A Single DFN 5X6 650 270 350 1.5 13 6 10 /
INN650DA500A Single DFN 5X6 650 365 500 1.3 10.5 5 9 /
INN650DA600A Single DFN 5X6 650 470 600 0.7 7.3 3.3 6 /
INN700DC140A Single DFN 5X6 700 106 140 3.5 33 17 32 /
INN700DC240A Single DFN 5X6 700 165 240 2 21 10 18 /
INN700DC350A Single DFN 5X6 700 270 350 1.5 13 6 10 /
INN650D140A Single DFN 8X8 650 106 140 3.5 33 17 32 /
INN650D190A Single DFN 8X8 650 138 190 2.8 24.5 11.5 20.5 /
INN650D240A Single DFN 8X8 650 165 240 2 21 10 18 /
INN650D350A Single DFN 8X8 650 270 350 1.5 13 6 10 /
LV GaN HEMT
Part number Configuration Package VDS max
(V)
RDS(on)_typ
(mΩ)
RDS(on) max
(mΩ)
QG
(nC)
Qoss
(nC)
ID max
(A)
IDPuls max
(A)
Models
INN030FQ015A Single FCQFN 5X4 30 1.2 1.5 22.8 43 60 300 available
INN040W048A Bidirection WLCSP 2.1X2.1 40 4 4.8 15.8 12.2 20 100 available
INN040W080A Bidirection WLCSP 1.7X1.7 40 6.1 8 10.1 8 14 70 available
INN040W120A Bidirection WLCSP 1.2X1.7 40 9 12 7.2 5.6 10 50 available
INN040FQ012A Bidirection FCQFN 6X4 40 0.9 1.2 60 45 100 500 available
INN040FQ015A Single FCQFN 5X4 40 1.2 1.5 28 58 50 200 available
INN040FQ043A Single FCQFN 4X3 40 3 4.3 6.2 14 24 160 available
INN040FQ045A-Q Single FCQFN 4X3 40 3 4.5 6.2 15 24 160 available
INN060FQ043A Single FCQFN 4X3 60 3 4.3 6.2 18 24 160 available
INN80LA01 Single LGA 2.3X3.3 80 6 8 6.5 27.9 13 180 available
INN100W027A Single WLCSP 4.45x2.30 100 2.1 2.7 13 77 64 320 available
INN100W032A Single WLCSP 3.5X2.13 100 2.5 3.2 9.2 50 60 230 available
INN100W070A Single WLCSP 2.5x1.5 100 5.5 7 4.5 25 29 125 available
INN100W135A-Q Single WLCSP 2.13X1.63 100 10 13.5 3.2 20 18 75 available
INN100W800A-Q Single WLCSP 0.9X0.9 100 53 80 0.8 4 1.7 17 available
INN100FQ016A Single FCQFN 4X6 100 1.4 1.8 22 125 100 320 available
INN100EQ016A Single En-FCQFN 4X6 100 1.4 1.8 22 125 100 320 available
INN100FQ025A Single FCQFN 3X5 100 2.2 2.8 14 85 80 320 available
INN100EQ025A Single En-FCQFN 3X5 100 2.2 2.8 14 85 80 320 available
INN150FQ032A Single FCQFN 4X6 150 3.2 3.9 20 130 100 260 available
INN150EQ032A Single En-FCQFN 4X6 150 3.2 3.9 20 130 100 260 available
INN150FQ070A Single FCQFN 4X6 150 5.4 7 13 75 60 160 available
INN150EQ070A Single En-FCQFN 4X6 150 5.4 7 13 75 60 160 available
INN150LA070A Single LGA 2.2X3.2 150 5.6 7 7.6 47 28 120 available
INV100FQ030A Bidirection FCQFN 4X6 100 2.5 3.2 90 85 100 320 available
ISG3201 SolidGaN (Driver+Half bridge GaN) LGA 5x6.5x1.1 100 2.4+2.4 3.2+3.2 9.2+9.2 50+50 60 N/A N/A
ISG3202LA SolidGaN (Driver+Half bridge GaN) LGA 5x6.5x1.1 100 2.4+2.4 3.2+3.2 9.2+9.2 50+50 60 N/A N/A
Part Number Naming
Design Support
  • Application Notes

    Here you will find Innoscience’s application notes on how to use InnoGaNTM transistors in your application.

    Document App Notes
    AN001 HV InnoGaN Gate Driving Design Guide
    AN002 LV InnoGaN Gate Driving Design Guide
    AN003 EMC Design Guide for Power Supplies with InnoGaN
    AN004 LV InnoGaN Parallel Design Guide
    AN005 AN005-Introduction of InnoGaN Switching Processes and Losses
    AN006 InnoGaN Layout Design Guide
    AN007 Introduction of InnoGaN Characteristics-Rev1.0
    AN008 InnoGaN SPICE Model and Simulation Guide
    AN009 InnoGaN Thermal Design Guide
    AN010 HV InnoGaN Low Power Parallel Design Guide
  • Device Model

    Here you will find device model information.

    In the table below, you can find device models that describe the typical electrical behavior of InnoGaN devices.
    At present, Innoscience provides four model files: LTspice, Pspice, SIMetrix, and Spectre.
    We have models available for several of our products and we can quickly develop models for other products upon customer request.

    Part number Configuration Package VDS max(V) RDS(on)_typ(mΩ) RDS(on) max(mΩ) QG(nC) Qoss(nC) ID max(A) IDPuls max(A) Models
    INN060FQ043A Single FCQFN 4X3 60 3 4.3 6.2 18 24 160
    available
    INN040W048A Bidirection WLCSP 2.1X2.1 40 4 4.8 15.8 12.2 20 100
    click here
    INN040W080A Bidirection WLCSP 1.7X1.7 40 6.1 8 10.1 8 14 70
    click here
    INN040W120A Bidirection WLCSP 1.2X1.7 40 9 12 7.2 5.6 10 50
    click here
    INN040FQ012A Bidirection FCQFN 6X4 40 0.9 1.2 60 45 100 500
    click here
    INN040FQ015A Single FCQFN 5X4 40 1.2 1.5 28 58 50 200
    click here
    INN040FQ043A Single FCQFN 4X3 40 3 4.3 6.2 14 24 160
    click here
    INN100W032A* Single WLCSP 3.5X2.13 100 2.4 3.2 9.2 50 60 230
    click here
    INN100FQ016A Single FCQFN 4X6 100 1.4 1.8 22 125 100 320
    click here
    INN100FQ025A Single FCQFN 3X5 100 2.2 2.8 14 85 80 320
    click here
    INN150FQ032A Single FCQFN 4X6 150 3.2 3.9 20 130 100 260
    click here
    INN150LA070A* Single LGA 2.2X3.2 150 5.6 7 7.6 46.8 28 120
    click here
    INN650D140A Single DFN 8X8 650 106 140 3.5 33 17 32
    click here
    INN650DA140A Single DFN 5X6 650 106 140 3.5 33 17 32
    click here
    INN650N140A Single WAFER 650 106 140 3.5 33 17 32
    click here
    INN650D190A Single DFN 8X8 650 138 190 2.8 24.5 11.5 20.5
    click here
    INN650DA190A Single DFN 5X6 650 138 190 2.8 24.5 11.5 20.5
    click here
    INN650N190A Single WAFER 650 138 190 2.8 24.5 11.5 20.5
    click here
    INN650D240A Single DFN 8X8 650 165 240 2 21 10 18
    click here
    INN650DA240A Single DFN 5X6 650 165 240 2 21 10 18
    click here
    INN650N240A Single WAFER 650 165 240 2 21 10 18
    click here
    INN650D350A Single DFN 8X8 650 270 350 1.5 13 6 10
    click here
    INN650DA350A Single DFN 5X6 650 270 350 1.5 13 6 10
    click here
    INN650N350A Single WAFER 650 270 350 1.5 13 6 10
    click here
    INN650DA500A Single DFN 5X6 650 365 500 1.3 10.5 5 9
    click here
    INN650N500A Single WAFER 650 365 500 1.3 10.5 5 9
    click here
    INN650DA600A Single DFN 5X6 650 470 600 0.7 7.3 3.3 6
    click here
    INN650N600A Single WAFER 650 470 600 0.7 7.3 3.3 6
    click here
    INN650N05 Single WAFER 650 620 800 0.7 5 2 5
    click here
    INN650N2K2A Single WAFER 650 1600 2200 0.2 2 0.8 1.6
    click here
  • Demo Board

    Here you will find the technical documentation related to Innoscience’s demo boards. 

    Innoscience can also assist you in developing your system solution with InnoGaN devices by designing and developing demo board(s) for your application(s).

     

     Part NoPictureFeatured ProductsDescriptionApplication

    Status

    (prefer/active/non-active)

    HV Demo INNDAD033B1   INN650DA04(QR) 33W 1C;
    Efficnecy 91.7% @90Vac;
    Size:26.5mm*26.5mm*26.5mm;
    Power Density:29W/in3
    Phone, Tablet active
    INNDAD033C1   INN650DA04(QR) 33W A+C;
    Efficnecy 91.7% @90Vac;
    Size:60mm*60mm*22mm;
    Power Density:29W/in3
    Phone, Tablet active
    INNDAD065B1   INN650DA260A(QR)
    INN150LA070A(SR)
    65W  1C  ALLGAN;
    Efficnecy 93.3% @90Vac;
    Size:48.7mm*27mm*26mm;
    Power Density:31W/in3
    Phone, Tablet, Laptop active
    INNDAD100B1   INN650D150A(PFC)
    INN650D260A(QR)
    100W 2A+2C;
    Efficnecy 92.2% @230Vac;
    Size:71mm*56mm*21.6mm;
    Power Density:19W/in3
    Phone, Tablet, Laptop active
    INNDAD200A1 INN650D150A(PFC)
    INN650D260A*2(LLC)
    200W LED Driver;
    Efficnecy 96% @230Vac;
    Size:196mm*35mm*13mm;
    Power Density:35W/in3
    LED Driver active
    INNDAD200B1   INN650D150A*2(PFC)
    INN650D260A*2(LLC)
    200W 2A+3C;
    Efficnecy 95% @230Vac;
    Size:75mm*75mm*23.5mm;
    Power Density:24W/in3
    Phone, Tablet, Laptop active
    INNDAD140A1   INN650D150A(PFC)
    INN650DA150A*2(AHB)
    INN150LA070A*2(AHB-SR)
    140W All GaN PD3.1( PFC+AHB ) ;
    Efficnecy 94% @90Vac;
    Size:60mm*60mm*22mm;
    Power Density:29W/in3
    Phone, Tablet, Laptop, devices supporting PD3.1 active
    INNDAD140B1   INN650D150A(PFC)
    INN650D150A(QR)
    INN150LA070A(QR-SR)
    140W All GaN PD3.1(PFC+QR);
    Efficnecy 93% @90Vac;
    Size:85mm*50mm*23mm;
    Power Density:23W/in^3
    Phone, Tablet, Laptop, devices supporting PD3.1 active
    INNDAD240A1   INN650D080BS*4(PFC)
    INN650DA260A*2(LLC)
    INN150LA070A*2(LLC-SR)
    240W All GaN 48V/5A (BTPPFC+LLC);
    Efficnecy 95% @90Vac;
    Size:85.5mm*58mm*20.5mm;
    Power Density:38.5W/in3
    devices supporting PD3.1、TV power supply、power tool、game console、LED Driver active
    LV Demo INNDDD150A1   INN040FQ043A 150W  Car/Notebook charger Buck-Boost;
    Peak Efficnecy 98.1% @24Vin、19.2V/6A、600kHz;
    Max Power:150W   
    Car/Notebook charger active
    HV EVB INNEHB650A2   TOLL Package 650V HB EVB;Half bridge configuration
    Isolated drive, NSI8220+uP1964;
    Vgs : +6V/-2V;
    PCBA size: 55mm*55mm
    Half bridge configuration active
    LV EVB INNEDD001A1   INN40W08
    INN040W048A
    Inno BiGaN Demo For OVP Application(Dual);
    Vin:8~22V;Mode:4:2/2:2;Controller:SC8571;Iomax:14A
    Input OVP applications such as phone, laptop and power bank active
    INNEHB040B1   INN040LA015A INN040LA015A open loop HB EVB;
    Vinmax:35V   Driver:uP1966E   Dual or Single PWM Input   Frequency:ajustable
    Half bridge configuration active
    INNEHB040A1   INN040FQ043A INN040FQ043A open loop HB EVB;
    Vinmax:35V   Driver:uP1966E   Dual or Single PWM Input   Frequency:ajustable
    Half bridge configuration active
    INNELD050A1   INN100W08 Single channel LIDAR;
    Vinmax:100V   FWHM:<5ns   Ipeak≤50A   Single Channel
    driverless car、artificial intelligence、VR active
    INNELD090B1   INN100W14 Two channel LIDAR;
    Vinmax:100V   FWHM:<5ns   Ipeak≤90A  Dual Channel
    driverless car、artificial intelligence、VR active
    INNEHB100A1   INN100W032A INN100W032A open loop HB EVB;
    Vinmax:80V   Driver:uP1966E   Dual or Single PWM Input   Frequency:ajustable
    Half bridge configuration active
    INNEHB100B1   ISG3201 ISG3201 open loop HB EVB;
    Vinmax:80V    Dual or Single PWM Input  
    Frequency:ajustable
    Half bridge configuration active
    INNEHB150A1   INN150LA070A 150V open loop HB EVB;
    Vinmax:120V   Driver:NCP51820    Dual or Single PWM Input   Frequency:ajustable
    Half bridge configuration active
Gate Drivers/Controllers

GaN transistors need optimized gate drivers / controllers to exploit their full potential. Below you can find a list of gate drivers/controllers typically used to drive InnoGaN transistors.
Innoscience with its partners can also assist you in developing a specific gate driver or controller for your specific application.
If you are a design house, we are open to work with you in developing specific solutions by using available or customized InnoGaN devices for a specific application or customer.

Part number

VDS_max (V)

RDS(on)_typ(mΩ)/
RDS(on)_max (mΩ)

QG (nC)

ID max (A)

Gate Driver/Controller IC

INN650D140A

650

106/140

3.5

17

Joulwatt - JW1515H  (QR)

Southchip - SC3021C  (QR)

Meraki -MK2697G  (QR)

Texas Instruments - UCC28056 (PFC)

NXP - TEA2017AT (PFC+LLC)

MPS - HR1211  (PFC+LLC)

Heyday - HEY1011

Kiwi - KP2206SSGA (QR)

INN650DA140A

650

106/140

3.5

17

INN650D190A

650

138/190

2.8

11.5

INN650DA190A

650

138/190

2.8

11.5

INN650D240A

650

165/240

2

10

INN650DA240A

650

165/240

2

10

INN650D350A

650

270/350

1.5

6

INN650DA350A

650

270/350

1.5

7

INN650DA500A

INN650DA600A

650

650

365/500

470/600

1.3

0.7

5

3.3

Joulwatt - JW1515H (QR)

Southchip - SC3021C (QR)

Meraki - MK2697G (QR)

INN040W048A

 40  4/4.8 15.8 20

AW32280CSR

Southchip - SC8571

Nuvoltatech - NU2205

Texas Instruments - BQ25980

 

INN040W080A

40 6.1/8 10.1 14

INN040W120A

40 9/12 7.2 10

INN100W032A

100

2.4/3.2

9.2

60

Monolithic Power Systems - MP8699B

UPI Semi - 1966e

Monolithic Power Systems - MPQ1918

Texas Instruments - LMG1205

INN150LA070A

 150  5.6/7  7.6  28

Texas Instruments - LMG1210

MinDCet - MDC901

INN040FQ015A

40 1.2/1.5 28 50

MPS - MP8699B
MPS - MPQ1918
UPI - UP1966E
Southchip - SC8886S
Renesas - ISL81806

INN040FQ043A 40 3/4.3 6.2 24

v

Management of Hazardous Substances
  • Management of Hazardous Substances

    We aim to continuously improve customer satisfaction and ensure that the requirements of Hazardous Substances Free are determined and met. Here you will find the information on the management of hazardous substances.

    Innoscience HSF Policy
    In order to fully control hazardous substances, we will: use environmentally friendly materials, prevent pollution, improve continuously, and meet the requirements of laws, regulations and customers.

    Innoscience DRC Conflict-Free Policy
    Innoscience is committed to fulfilling corporation social responsibility, andimplementing ethical procurement to promote sustainable development of the supply chain. Through industry initiatives and collaboration with our supply chain partners, we ensure that Innoscience's products and supply chain comply with the DRC Conflict-Free.
    ● Innoscience never purchase tin, tungsten, tantalum, gold (3TG), cobalt, mica, and other related minerals ("conflict minerals") from Conflict Affected and High-Risk Areas (“CAHRAs”).
    ● Innoscience and our suppliers promote responsible procurement throughout the entire supply chain and will keep paying attention to the issue of "conflict minerals" toensure the integrity, stability, and traceability of the supply chain.

    Innoscience Hazardous Substances Management related documents:

    Names of documentsPurpose of the documentsClick to download

    Innoscience HSF Control List

    Provide Innoscience's control requirements for various hazardous substances to suppliers and customers, and communicate with customers if they have higher requirements.

    Innoscience HSF Control List

    Hazardous Substances Test Reports of Products for 2023 

    Innoscience conducts annual testing of HV/LV products for hazardous substances, including RoHS, REACH, TSCA, halogens, organotin compounds, beryllium and antimony, and no hazardous substances have been detected to date.

    Hazardous Substances Test Reports of Products for 2023

    Supplier Environmental Safety Management

    Agreement Environmental Management Material Control Commitment

    Innoscience requires suppliers to sign agreements and commitments related to the control of hazardous substances, and provide effective annual hazardous substances testing reports for raw and auxiliary materials.

    Supplier Environmental Safety Management Agreement
    Environmental Management Material Control Commitment
Work With Us
  • Original Equipment Manufacture (OEM), system integrators and tier-1

    You can develop your system solution(s) by using InnoGaN device. We assure excellent performance, reliability, support, security of supply, large capacity and lowest prices.
    We can also assist you in developing your system solution with InnoGaN devices as well as we can also customize InnoGaN devices towards your specifications.

    You can develop your system(s) by using InnoGaN device. Please check our product list to find the InnoGaN device suitable for your application(s) and the associated gate driver/controller

    Innoscience can also assist you in developing your system solution with InnoGaN devices by providing device samples, available demo boards or designing and developing demo board(s) for your application(s).

    You don’t find what you need? We can also customize InnoGaN design towards your specifications. 

    We have an established approach to develop customized solutions: once we narrow down together the specifications, we can design InnoGaN devices towards your specifications. We provide engineering samples within 3 to 6 months and, afterwards, we are ready for mass production with qualified devices within 6 months.

    Overall, we assure excellent performance, reliability, security of supply, large capacity and lowest prices thanks to our large volume capabilities, 8-inch wafer size and advanced high-throughput manufacturing tools. 

  • Design House

    As a design house, you can use InnoGaN device to develop gate drivers, controller, boards for specific applications etc... We can also become a partner for specific applications or customer needs.

    As a design house, you can use InnoGaN device to develop boards or gate driver/controller  for specific applications. If needed, our engineers will be happy to support you.  

    We can also become a partner for specific application or customer needs.

    For instance, you can develop a specific gate driver/controller for an application.  Once you have developed a gate driver/controller for InnoGaN, you can co-package and commercialize your gate driver together with InnoGaN transistors. We can also assist you in the co-packaging part and discuss the best path for commercialization. 

  • Others

    At Innoscience we believe in collaboration. Please reach us to explore your needs, what we can do together and what Innoscence can do for you. We all want GaN technology to be successful and widespread in the market!