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100V Enhancement-mode GaN Power Transistor

GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in En-FCLGA with 3.3mm x 3.3mm package size.

Platform (S100E3.0I)
Product (INN100EA035A)
Test Items	Test Conditions	Sample Size (Unit x Lot)	#Fail	Result
HTRB	T=150°C, VD=100V, 1000hrs	77 x 3	0 Fail	Pass
LTRB	T=-40°C, VD=100V, 1000hrs	77 x 3	0 Fail	Pass
HTGB	T=150°C, VG=6V, 1000hrs	77 x 3	0 Fail	Pass
HTGB-	T=150°C, VG=-4V, 1000hrs	77 x 3	0 Fail	Pass
LTGB	T=-40°C, VG=6V, 1000hrs	77 x 3	0 Fail	Pass
LTGB-	T=-40°C, VG=-4V, 1000hrs	77 x 3	0 Fail	Pass
ESD-HBM	T=25°C, All pin	10 x 1	0 Fail	Class 1B
ESD-CDM	T=25°C, All pin	10 x 1	0 Fail	Class C2a
DHTOL	Hard switching, T=125°C, 100KHz, VD=80V, 1000hrs	8set x 1	0 Fail	Pass
	Hard switching, T=125°C, 600KHz, VD=80V, 1000hrs	8set x 2	0 Fail	Pass
	Soft Switching, T=125°C, 500KHz, VD=80V, 1000hrs	8set x 1	0 Fail	Pass
	Soft Switching, T=125°C, 1.5MHz, VD=80V, 1000hrs	8set x 2	0 Fail	Pass
MSL3	T=30°C, RH=60%, 3 x reflow, 192hrs	25 x 3	0 Fail	Pass
H3TRB	T=85°C, RH=85%, VD=80V, 1000hrs	77 x 3	0 Fail	Pass
PLTC	-55 to +150°C, Air, 1000Cycles	77 x 3	0 Fail	Pass
uHAST	T=130°C, RH=85%	77 x 3	0 Fail	Pass
IOL	ΔTj ≥ 125℃; ton / toff = 1 min /5 min, 5000 Cycles	77 x 3	0 Fail	Pass
RSH	T=125°C bake 24hrs, T=30°C RH=60% soak 192hrs, 260±5℃, 10±1s	30 x 1	0 Fail	Pass
Solderability	Precondition Condition C (8hrs), Pb-free：245±5℃, 5±0.5s	10 x 1	0 Fail	Pass