About INNOSCIENCE

Innoscience is the largest 8-inch Integrated Device Manufacture (IDM) fully focused on GaN technology in the world. We fully control and own the world-wide largest dedicated 8-inch GaN-on-Si wafers manufacturing capacity. 

We design, develop and manufacture highly performing and reliable GaN devices for a wide range of applications and voltages (30V-650V). We assure excellent performance, reliability, support, security of supply, large capacity and lowest prices thanks to our large volume capabilities, 8-inch wafer size and advanced high-throughput manufacturing tools.

Innoscience’s GaN devices are already used in several products such as Power Delivery chargers, smart phones, laptops, LIDARs, Data centers etc. We collaborate with several customers and partners to enable systems and solutions based on GaN technology. 

Suzhou Future

Zhuhai

Suzhou

Suzhou Close up

  • Zhuhai

    4now

    wafers/month

    Zhuhai Fab
  • Suzhou

    6K now

    wafers/month

    Suzhou Fab
  • Suzhou

    65K in 2025

    wafers/month


  • 1400+

    Employees

TECHNOLOGY
  • 8-inch GaN-on-Si epitaxy

    8-inch GaN-on-Si epitaxy

    In-house 8-inch GaN-on-Si epitaxy for top performing HV and LV devices.

  • 8-inch GaN-on-Si process technology

    8-inch GaN-on-Si process technology

    By developing a Silicon-compatible process flow, Innoscience has leveraged years of learning and optimization for the mass production of Silicon technology for the production of cost-effective 8-inch GaN-on-Si transistors.

  • 8-inch GaN-on-Si device technology

    8-inch GaN-on-Si device technology

    Optimized normally-off/enhancement mode (e-mode) 8-inch GaN-on-Si device technology for a wide range of applications and voltages (30V-650V) 

PRODUCTS

Innoscience offers a wide range of GaN-on-Si devices covering both low voltage (30V-150V) and high voltage (650V) application requirements.

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