HVDC

Gallium Nitride (GaN), a third-generation wide-bandgap semiconductor, features low power loss, high-frequency capability and superior high-voltage tolerance, greatly upgrading data center HVDC power systems. It raises the peak efficiency of AC/DC and DC-DC power conversion to over 98%, significantly reducing overall power consumption. Its high power density minimizes passive components and shrinks power module size, improving cabinet space utilization and computing density. With low heat generation and high reliability, GaN eases thermal load, cuts cooling energy use and optimizes PUE, enabling more energy-efficient and low-carbon modern data centers.