At OCP Global Summit, the world’s largest power GaN manufacturer showcases high-efficiency solutions for AI servers and 800 VDC architectures

SAN JOSE, Calif., October 20, 2026 – Innoscience (HKEX: 02577), the world’s leading fully integrated manufacturer of gallium nitride (GaN) power semiconductors, today showcased its GaN power solutions for next-generation AI infrastructure at the Open Compute Project (OCP) Global Summit as a participant in the NVIDIA MGX ecosystem.

As AI compute scales, power has become a defining constraint on data-center performance. Every watt lost in conversion limits how much compute a rack can deliver. Innoscience’s GaN solutions address this directly, enabling higher power density, lower energy losses and greater system efficiency across AI servers, data-center power supplies and emerging 800 VDC architectures.

Scale Built for AI Demand

Innoscience operates the world’s largest vertically integrated GaN manufacturing platform and leads the industry in high-volume 8-inch GaN-on-silicon production. This combination of design, process and manufacturing under one roof gives hyperscalers and AI infrastructure providers what they need most as deployments accelerate: proven volume, supply-chain resilience and cost competitiveness at scale.

Participation in the NVIDIA MGX ecosystem reflects this readiness and positions Innoscience to support partners building the modular, high-performance platforms that underpin AI infrastructure.

A Fast-Growing Market

According to Yole Group’s Power GaN 2026 report, the global power GaN device market is projected to reach approximately US$3.5 billion by 2031, a 35% CAGR. Infrastructure and telecom applications, including AI data centers, are expected to grow faster still, at a 45% CAGR.

The broader GaN semiconductor devices market, spanning power electronics, RF, telecommunications infrastructure, automotive and industrial applications, is projected by Grand View Research to reach approximately US$28.9 billion by 2033.

With its manufacturing scale, broad product portfolio and established high-volume production, Innoscience is well positioned to support customers across this expanding landscape.

About Innoscience

Innoscience (HKEX: 02577.HK) is a global leader in GaN process innovation and power device manufacturing. The company’s device design and performance set global benchmarks for GaN technology. Innoscience’s GaN portfolio spans low-, mid-, and high-voltage applications with device ratings ranging from 15V to 1200V. With more than 1,300 granted or pending patents, its products deliver outstanding performance and high reliability across applications from 20W to 20kW. Innoscience is dedicated to shaping a brighter future powered by GaN.