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INN100EBD050DAD

100V Enhancement-mode GaN Power Transistor

1. General description

GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in En-FCLGA with 5.0 mm x 6.0mm package size.

1.1 Features

GaN-on-Silicon E-mode HEMT technology
Very low gate charge
Ultra-low on resistance
Very small package size
Zero reverse recovery charge

1.2 Applications

High frequency DC-DC converter
High density DC-DC power module
Synchronous rectification
Motor driver
Solar system MPPT

2. Reliability Tests

Spin off Qualification Result
Note: * Spin off products have same device process and design, H/LTRB, H/LTGB+/, H/LTGB- test refer to INN100EA035A and INN100EBD018DAD. Note: EN-LGA 3.3X3.3 and EN-LGA 5x6 have same package process, EN-LGA 5x6 package reliability refer to EN-LGA 3.3x3.3 (INN100EA035A) and verify 3 lots TC and 1lot package related reliability (MSL3/H3TRB /uHAST/IOL/RSH/Solderability).
Test Items	Test Condition	INN100EBD018DAD	INN100EBD025DAD	INN100EBD050DAD	Result
HTRB	T=150°C, VD=100V, 168hrs	77 x 1	77 x 1	77 x 1	Pass
LTRB	T=-40°C, VD=100V, 168hrs	77 x 1	77 x 1	77 x 1	Pass
HTGB	T=150°C, VG=6V, 168hrs	77 x 1	77 x 1	77 x 1	Pass
LTGB	T=-40°C, VG=6V, 168hrs	77 x 1	77 x 1	77 x 1	Pass
ESD-HBM	T=25°C, All pin	10 x 1	10 x 1	10 x 1	Class_1B
ESD-CDM	T=25°C, All pin	10 x 1	10 x 1	10 x 1	Class_C2a
MSL3	T=30°C, RH=60%, 3 x reflow, 192hrs	25 x 1	/*	/*	Pass
H³TRB	T=85°C, RH=85%, VD=80V, 1000hrs	77 x 1	/*	/*	Pass
PLTC	-55 to +150°C, Air, 1000Cycles	77 x 3	/*	/*	Pass
uHAST	T=130°C, RH=85%	77 x 1	/*	/*	Pass
IOL	ΔTj ≥ 125℃; ton / toff = 1 min /5 min, 5000 Cycles	77 x 1	/*	/*	Pass
RSH	T=125°C bake 24hrs, T=30°C RH=60% soak 192hrs,	30 x 1	/*	/*	Pass
RSH	260±5℃, 10±1s	30 x 1	/*	/*	Pass
Solderability	Precondition Condition C (8hrs), Pb-free：245±5℃, 5±0.5s	10 x 1	/*	/*	Pass

Parameter	Value
VDS,max	100V
RDS(on),typ @ VGS = 5 V	3.8mΩ
RDS(on),max @ VGS = 5 V	5mΩ
QG,typ @ VDS = 50 V	5.7nC
IDS,Pulse (TJ = 25˚C)	300A
QOSS @ VDS = 50 V	29.2nC

Downloads

Datasheet

Product Reliability Report

SPICE Model