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INN040FQ015A

40V GaN Enhancement-mode Power Transistor

1. Datasheet

GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCQFN with 5 mm x 4 mm package size.

1.1 Features

GaN-on-Silicon E-mode HEMT technology
Very low gate charge
Ultra-low on resistance
Zero reverse recovery charge

1.2 Applications

Battery Charger
Battery Management System
Notebook
Industry

2. Reliability Tests

Platform (S040E2.5)
Product (INN040FQ015A)
Test Items	Test Conditions	Sample Size (Unit x Lot)	#Fail	Result
MSL3	Ta=30°C, RH=60%, 3 x reflow, 192hrs	25 x 3	0 Fail	Pass
HTRB	Tj=150°C, VD=32V, 1000hrs	77 x 3	0 Fail	Pass
HTGB	Tj=150°C, VG=5.5V, 1000hrs	77 x 3	0 Fail	Pass
TC	-40 to +125°C, Air, 1000Cys	77 x 3	0 Fail	Pass
H³TRB	Ta=85°C, RH=85%, VD=32V, 1000hrs	77 x 3	0 Fail	Pass
Solderability	Pre-Con: 8hrs Pb-free: 245±5°C, 5±0.5s	25 x 3	0 Fail	Pass
DHTOL	BUCK, Vin=12V, Vout=5V, Iout=15A, Fsw=500KHz, Tj=125°C, 1000hrs	8 x 3	0 Fail	Pass
HBM	All Pins	3 x 1	0 Fail	Class 1B
CDM	All Pins	3 x 1	0 Fail	Class 2a

Parameter	Value
V_DS,max	40V
_RDS(on),max @ V_G = 5 V	1.5mΩ
Q_G,typ @ V_DS = 20 V	28nC
I_D_, Pulse	200A
Q_OSS@ V_{DS =}20V	58nC

Downloads

Datasheet

Product Reliability Report

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