English
简体
1.1 Features
- 3.1mΩ(HS)/2.7mΩ(LS) Half-Bridge GaN FETs with
- Gate Driver
- 80V Continuous, 100V Transient Voltage Rating
- Capable of up to 5MHz Switching
- Independent High-Side and Low-Side PWM Inputs
- High-Side and Low-Side Driver Interlocking
- Internal Strong and Smart Bootstrap Switch
- Adaptive Shoot-Through Protection
- Fast Propagation Delay (20ns Typical)
- Excellent Delay Matching (1ns Typical)
- Built-In UVLO, OVLO, OTP Protections
- 35μA Low VCC Quiescent Current
- Integrated VCC/BST capacitors
- High dv/dt Immunity up to 50V/ns
- Adjustable Turn-on Speeds
- Optimized for Easy and Low-EMI PCB Layout
- En-LGA 6.5mmx6.5mm with Top Side Cooling
