700V GaN Enhancement-mode Power Transistor
700V GaN-on-Silicon Enhancement-mode Power Transistor in TO-220F package.
Innoscience’s E-mode GaNFETs were subjected to a variety of reliability test under the condition referenced to typical for silicon-based power MOSFETs.These test items and results were shown as below:
| Platform ( INN650D080BS/INN700D080BS) | ||||
|---|---|---|---|---|
| Test Items | Test Conditions |
Sample Size (Unit x Lot) | #Fail | Result |
| HTRB | T=150°C, VDS= 560V, 1000hrs | 77 x 3 | 0 Fail | Pass |
| HTGB | T=150°C, VGS= 7V, 1000hrs | 77 x 3 | 0 Fail | Pass |
| *HTGB(-) | T=150°C, VGS= -6V, 1000hrs | 77 x 3 | 0 Fail | Pass |
| TC | -55 to +150°C, Air, 1000Cys | 77 x 3 | 0 Fail | Pass |
| HAST | T=130°C, RH=85%, VDS=100V, 96hrs | 77 x 3 | 0 Fail | Pass |
| H3TRB | T=85°C, RH=85%, VDS=560V, 1000hrs | 77 x 3 | 0 Fail | Pass |
| MSL3 | T=30°C, RH=60%, 3 x reflow, 192hrs | 25 x 3 | 0 Fail | Pass |
| HBM | All Pins | 3 x 1 | 0 Fail | Class 2 |
| CDM | All Pins | 3 x 1 | 0 Fail | Class C3 |
| HTOL (LLC) | Tj=125°C, Input: 220 Vac, Vout=48V, Vplat=400V, fsw=130KHz | 10 x 3 | 0 Fail | Pass |
| HTOL（QR-PFC） | Tj=125°C, Input: 90 Vac, Output: 20V/6.5A, F=120KHz(QR)/100KHz(PFC) | 10 x 3 | 0 Fail | Pass |
| Note:*HTGB(-)was optional test item for device with bidirectional ESD design. | ||||
|
Spin-off Product | ||||
| Test Items | Test Conditions |
Sample Size (Unit x Lot) | #Fail | Result |
| HTRB | T=150°C, VDS= 560V, 168hrs | 77 x 1 | 0 Fail | Pass |
| HTGB | T=150°C, VGS= 7V, 168hrs | 77 x 1 | 0 Fail | Pass |
| New Package Type Qualification test | ||||
| Test Items | Test Conditions |
Sample Size (Unit x Lot) | #Fail | Result |
| TC | -55 to +150°C, Air, 1000Cys | 77 x 3 | 0 Fail | Pass |
| HAST | T=130°C, RH=85%, VDS=100V, 96hrs | 77 x 3 | 0 Fail | Pass |
| H3TRB | T=85°C, RH=85%, VDS=560V, 1000hrs | 77 x 3 | 0 Fail | Pass |
| MSL3 | T=30°C, RH=60%, 3 x reflow, 192hrs | 25 x 3 | 0 Fail | Pass |
| Note: Package type Spin off have the same package process and design rules | ||||
| Parameter | Value |
|---|---|
| VDS,max | 700V |
| RDS(on),max @ VGS = 6 V | 350mΩ |
| QG,typ @ VDS = 400 V | 1.5nC |
| ID,pulse | 10A |
| QOSS @ VDS = 400 V | 13nC |
| Qrr @ VDS = 400 V | 0nC |
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