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INN030EQ015A

30V Enhancement-mode GaN Power Transistor

1. General description

GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in En-FCQFN with 5 mm x 4 mm package size.

1.1 Features

GaN-on-Silicon E-mode HEMT technology
Very low gate charge
Ultra-low on resistance
Zero reverse recovery charge
Exposed die for top‑side thermal optimization

1.2 Applications

High frequency DC-DC converter
Battery charger
Battery management system
Notebook
Industry

2. Reliability Tests

Platform (S040E2.5)
Product (INN030FQ015A)
Test Items	Test Conditions	Sample Size (Unit x Lot)	#Fail	Result
MSL3	Ta=30°C, RH=60%, 3 x reflow, 192hrs	25 x 1	0 Fail	Pass
H3TRB	Ta=85°C, RH=85%, VD=24V, 1000hrs	77 x 1	0 Fail	Pass
HAST	T=130°C, RH=85%, VD=24V, 96hrs	77 x 1	0 Fail	Pass
TC	-40 to +125°C, Air, 1000Cys	77 x 1	0 Fail	Pass
HBM	All Pins	3 x 1	0 Fail	Class 1B
CDM	All Pins	3 x 1	0 Fail	Class 2a

Parameter	Value
V_DS,max	30V
_RDS(on),max @ V_G = 5 V	1.5mΩ
Q_G,typ @ V_DS = 15 V	22.8nC
I_D_, Pulse	300A
Q_OSS@ V_{DS =}15V	43nC

Downloads

Datasheet

Product Reliability Report

SPICE Model