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INN150EQ070A

150V Enhancement-mode GaN Power Transistor

1. Datasheet

GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in En-FCQFN with 4.0 mm x 6.0 mm package size.

1.1 Features

GaN-on-Silicon E-mode HEMT technology
Industry Application
Very low gate charge
Ultra-low on resistance
Very small footprint

1.2 Applications

High frequency DC-DC converter
Solar Systems optimizers and microinverters
PD Charger and PSU Synchronous Rectification
Telecom Power Supply
Motor driver

2. Reliability Tests

Platform（S150E2.0I）
Product (INN150EQ070A)
Test Items	Test Conditions	Sample Size (Unit x Lot)	#Fail	Result
MSL3	T=30°C, RH=60%, 3 x reflow, 192hrs	25 x 5	0 Fail	Pass
HTS	T=150°C	77 x 4	0 Fail	Pass
TC	-55 to +150°C, Air, 1000Cys.	77 x 5	0 Fail	Pass
H³TRB	T=85°C, RH=85%, VD=80V/120V, 1000hrs	77 x 4	0 Fail	Pass
HAST	T=130°C, RH=85%, VD=42V, 96hrs	77 x 4	0 Fail	Pass

Note: EN-FCQFN New package qualified at INN150EQ032A, INN150EQ070A, INN100EQ016A, INN100EQ025A and INV100EQ030A , have the same package design & process.

Parameter	Value
V_DS,max	150V
R_DS(on),max @ V_GS = 5 V	7mΩ
Q_G,typ @ V_DS = 75 V	13nC
I_D,pulse	160A
Q_OSS @ V_DS = 75 V	75nC

Downloads

Datasheet

Product Reliability Report