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INN100FQ016A

100V Enhancement-mode GaN Power transistor

1. Datasheet

GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCQFN with 4.0 mm x 6.0 mm package size.

1.1 Features

GaN-on-Silicon E-mode HEMT technology
Very low gate charge
Ultra-low on resistance
Very small footprint

1.2 Applications

High frequency DC-DC converter
Point of Load
RF envelope tracking
PC charger
Mobile power bank
Motor driver

2. Reliability Tests

Platform（S100E2.0）
Product (INN100FQ016A)
Test Items	Test Conditions	Sample Size (Unit x Lot)	#Fail	Result
MSL3	Ta=30°C, RH=60%, 3 x reflow	25 x 3	0 Fail	Pass
HTRB	T=150°C, VD=80V	77 x 1	0 Fail	Pass
HTGB	T=150°C, VG=5.5V	77 x 1	0 Fail	Pass
PLTC	-55°C to +150°C,	77 x 3	0 Fail	Pass
H³TRB	T=85℃, RH=85%, VD=42V	77 x 3	0 Fail	Pass
HAST	T=130°C, RH=85%, VD=42V	77 x 3	0 Fail	Pass
HTSL	T=150°C	77 x 3	0 Fail	Pass
Solderability	1.Precondition : 8H 2. Pb-feee,245±5℃,5±0.5S.	10 x 1	0 Fail	Pass
HBM	All Pins	3 x 1	0 Fail	Class 2
CDM	All Pins	3 x 1	0 Fail	Class C3

Parameter	Value
V_DS,max	100V
R_DS(on),max @ V_GS = 5 V	1.8mΩ
Q_G,typ @ V_DS = 50 V	22nC
I_D,pulse	320A
Q_OSS @ V_DS = 50 V	125nC

Downloads

Datasheet

Product Reliability Report

SPICE Model