650V GaN Enhancement-mode Power Transistor
650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead package (DFN) with 8 mm × 8 mm size.
| Platform Product (INN650TA030AH) | ||||
|---|---|---|---|---|
| Spin-off Product (INN650D070AH) | ||||
| Test Items | Test Conditions |
Sample Size (Unit x Lot) | #Fail | Result |
| HTRB | T=150°C, VDS= 560V | 77 x 1 | 0 Fail | Pass |
| HTGB | T=150°C, VGS= 7V | 77 x 1 | 0 Fail | Pass |
| HTGB(-) | T=150°C, VGS= -6V | 77 x 1 | 0 Fail | Pass |
| LTRB | T=-40°C, VDS= 650V | 77 x 1 | 0 Fail | Pass |
| LTGB | T=-40°C, VGS= 7V | 77 x 1 | 0 Fail | Pass |
| LTGB (-) | T=-40°C, VGS= -6V | 77 x 1 | 0 Fail | Pass |
| TC | -55 to +150°C, Air | 77 x 3 | 0 Fail | Pass |
| HAST | T=130°C, RH=85%, VDS=100V | 77 x 3 | 0 Fail | Pass |
| H3TRB | T=85°C, RH=85%, VDS=560V | 77 x 3 | 0 Fail | Pass |
| HTSL | T=150°C | 77 x 3 | 0 Fail | Pass |
| IOL | ΔTj ≥ 100℃, Ton=Toff=2min | 77 x 1 | 0 Fail | Pass |
| Solderability | 1. Precondition: 8H 2. Pb-free, 245±5°C, 5±0.5S. |
10 x 1 | 0 Fail | Pass |
| HTOL | Vplatform=450V,Irms=15A, Fre=65KHZ,Tj=125°C | 8sets x 3 | 0 Fail | Pass |
| MSL3 | T=30°C, RH=60%,3 x reflow | 25 x 3 | 0 Fail | Pass |
| HBM | All Pins | 3 x 1 | 0 Fail | Class 2 |
| CDM | All Pins | 3 x 1 | 0 Fail | Class C3 |
| Note: Package type Spin off have the same package process and design rules | ||||
| Parameter | Value |
|---|---|
| VDS,max | 650V |
| RDS(on),max @ VGS = 6 V | 70mΩ |
| QG,typ @ VDS = 400 V | 8.5nC |
| ID,pulse | 60A |
| QOSS @ VDS = 400 V | 94.7nC |
| Qrr @ VDS = 400 V | 0nC |
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