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150V Enhancement-mode GaN Power Transistor

GaN-on-Silicon enhancement mode high-electron-mobility-transistor(HEMT) in Flip chip LGA (FCLGA) with 3.2mm x 2.2mm package size.

Platform (S150E2.0)
Product (INN150LA070A)
Test Items	Test Conditions	Sample Size (Unit x Lot)	#Fail	Result
MSL3	T=30°C, RH=60%, 3 x reflow, 192hrs	25 x 3	0 Fail	Pass
HTRB	T=150°C, VD=120V, 1000hrs	77 x 3	0 Fail	Pass
HTGB	T=150°C, VG=5.5V, 1000hrs	77 x 3	0 Fail	Pass
HTSL	T=150°C	77 x 3	0 Fail	Pass
TC	-40 to +125°C, Air, 1000Cys	77 x 3	0 Fail	Pass
HAST	T=130°C, RH=85%, VD=42V, 96hrs	77 x 3	0 Fail	Pass
HTOL	QR system: Tj=125°C, Vplatform=120V, Power out=120W, Vout=20V, f=130KHz	8 x 3	0 Fail	Pass
HBM	All Pins	3 x 1	0 Fail	Class 1B
CDM	All Pins	3 x 1	0 Fail	Class C2b