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INN650D140A

650V GaN Enhancement-mode Power Transistor

1. Datasheet

650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead package (DFN) with 8 mm × 8 mm size

1.1 Features

Enhancement mode transistor-Normally off power switch
Ultra high switching frequency
No reverse-recovery charge
Low gate charge, low output charge
Qualified for industrial applications according to JEDEC Standards
ESD safeguard
RoHS, Pb-free, REACH-compliant

1.2 Applications

AC-DC converters
DC-DC converters
Totem pole PFC
Fast battery charging
High density power conversion
High efficiency power conversion

2. Reliability Tests

Innoscience’s E-mode GaNFETs were subjected to a variety of reliability test under the condition referenced to typical for silicon-based power MOSFETs.These test items and results were shown as below:

Platform ( INN650D140A )
Test Items	Test Conditions	Sample Size (Unit x Lot)	#Fail	Result
HTRB	T=150°C, VDS= 520V, 1000hrs	77 x 3	0 Fail	Pass
HTGB	T=150°C, VGS= 6.5V, 1000hrs	77 x 3	0 Fail	Pass
TC	-55 to +150°C, Air, 1000Cys	77 x 3	0 Fail	Pass
HAST	T=130°C, RH=85%, VDS=100V, 96hrs	77 x 3	0 Fail	Pass
H³TRB	T=85°C, RH=85%, VDS=520V, 1000hrs	77 x 3	0 Fail	Pass
MSL3	T=30°C, RH=60%, 3 x reflow, 192hrs	25 x 3	0 Fail	Pass
HBM	All Pins	3 x 1	0 Fail	Class 2
CDM	All Pins	3 x 1	0 Fail	Class C3
HTOL（QR-PFC）	Tj=125°C, Input: 90 Vac, Output: 20V/6.5A, F=120KHz(QR)/100KHz(PFC)	10 x 3	0 Fail	Pass
Spin-off Product( INN650D140A)
Test Items	Test Conditions	Sample Size/Product (Unit x Lot)/Product	#Fail	Result
HTRB	T=150°C, VDS= 520V, 168hrs	77 x 1	0 Fail	Pass
HTGB	T=150°C, VGS= 6.5V, 168hrs	77 x 1	0 Fail	Pass
TC	-55 to +150°C, Air, 1000Cys	77 x 1	0 Fail	Pass
HAST	T=130°C, RH=85%, VDS=100V, 96hrs	77 x 1	0 Fail	Pass
H³TRB	T=85°C, RH=85%, VDS=520V, 1000hrs	77 x 1	0 Fail	Pass
MSL3	T=30°C, RH=60%, 3 x reflow, 192hrs	25 x 1	0 Fail	Pass