Innoscience-Product

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INN700TH480B

2. Reliability Tests

Innoscience’s E-mode GaNFETs were subjected to a variety of reliability test under the condition referenced to typical for silicon-based power MOSFETs.These test items and results were shown as below:

Platform ( INN650D080BS/INN700D080BS)
Test Items	Test Conditions	Sample Size (Unit x Lot)	#Fail	Result
HTRB	T=150°C, VDS= 560V, 1000hrs	77 x 3	0 Fail	Pass
HTGB	T=150°C, VGS= 7V, 1000hrs	77 x 3	0 Fail	Pass
*HTGB(-)	T=150°C, VGS= -6V, 1000hrs	77 x 3	0 Fail	Pass
TC	-55 to +150°C, Air, 1000Cys	77 x 3	0 Fail	Pass
HAST	T=130°C, RH=85%, VDS=100V, 96hrs	77 x 3	0 Fail	Pass
H³TRB	T=85°C, RH=85%, VDS=560V, 1000hrs	77 x 3	0 Fail	Pass
MSL3	T=30°C, RH=60%, 3 x reflow, 192hrs	25 x 3	0 Fail	Pass
HBM	All Pins	3 x 1	0 Fail	Class 2
CDM	All Pins	3 x 1	0 Fail	Class C3
HTOL (LLC)	Tj=125°C, Input: 220 Vac, Vout=48V, Vplat=400V, fsw=130KHz	10 x 3	0 Fail	Pass
HTOL（QR-PFC）	Tj=125°C, Input: 90 Vac, Output: 20V/6.5A, F=120KHz(QR)/100KHz(PFC)	10 x 3	0 Fail	Pass
Note:*HTGB(-)was optional test item for device with bidirectional ESD design.
Spin-off Product
Test Items	Test Conditions	Sample Size (Unit x Lot)	#Fail	Result
HTRB	T=150°C, VDS= 560V, 168hrs	77 x 1	0 Fail	Pass
HTGB	T=150°C, VGS= 7V, 168hrs	77 x 1	0 Fail	Pass
New Package Type Qualification test
Test Items	Test Conditions	Sample Size (Unit x Lot)	#Fail	Result
TC	-55 to +150°C, Air, 1000Cys	77 x 3	0 Fail	Pass
HAST	T=130°C, RH=85%, VDS=100V, 96hrs	77 x 3	0 Fail	Pass
H³TRB	T=85°C, RH=85%, VDS=560V, 1000hrs	77 x 3	0 Fail	Pass
MSL3	T=30°C, RH=60%, 3 x reflow, 192hrs	25 x 3	0 Fail	Pass
Note: Package type Spin off have the same package process and design rules

Parameter	Value
VDS,max	700V
RDS(on),max @ VGS = 6 V	480mΩ
QG,typ @ VDS = 400 V	1.3nC
ID,pulse	9A
QOSS @ VDS = 400 V	10.5nC
Qrr @ VDS = 400 V	0nC

Downloads

Datasheet

Product Reliability Report

SPICE Model