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INN150FQ032A

150V Enhancement-mode GaN Power Transistor.

1. Datasheet

GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCQFN with 4.0 mm x 6.0 mm package size.

1.1 Features

GaN-on-Silicon E-mode HEMT technology
Industry Application
Very low gate charge
Ultra-low on resistance
Very small footprint

1.2 Applications

High frequency DC-DC converter
Solar Systems optimizers and microinverters
PD Charger and PSU Synchronous Rectification
TelecomPower Supply
Motor driver

2. Reliability Tests

Platform (S150E2.0I)
Product (INN150FQ032A)
Test Items	Test Conditions	Sample Size (Unit x Lot)	#Fail	Result
MSL3	T=30°C, RH=60%, 3 x reflow, 192hrs	25 x 3	0 Fail	Pass
HTRB	T=150°C, VD=150V, 1000hrs	77 x 3	0 Fail	Pass
HTGB	T=150°C, VG=5.5V, 1000hrs	77 x 3	0 Fail	Pass
HTS	T=150°C	77 x 3	0 Fail	Pass
TC	-55 to +150°C, Air, 1000Cys.	77 x 3	0 Fail	Pass
H³TRB	T=85°C, RH=85%, VD=120V, 1000hrs	77 x 3	0 Fail	Pass
HAST	T=130°C, RH=85%, VD=42V, 96hrs	77 x 3	0 Fail	Pass
DHTOL	Tc=125℃, Vin=120V, Vout=36V, Iout=2.8A, fsw=200KHz	8 x 3	0 Fail	Pass
HBM	All Pins	3 x 1	0 Fail	Class 1C
CDM	All Pins	3 x 1	0 Fail	Class C3

Parameter	Value
V_DS,max	150V
R_DS(on),max @ V_G = 5 V	3.9mΩ
Q_G,typ @ V_DS = 75 V	20nC
I_DS, Pulse	260A
Qoss@ Vds =75V	130nC

Downloads

Datasheet

Product Reliability Report

SPICE Model