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INN80LA01

Automotive 80V Enhancement-mode GaN Power Transistor

1. Datasheet

GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in LGA with 2.3 mm x 3.3 mm package size.

1.1 Features

AEC-Q101 Qualified*
Ultra-High Switching Frequency and Ultra-Low R_{DS (on)}
Fast and Controllable Fall and Rise Time
Zero Reverse Recovery Loss
Note *: V_GS(TH)shift ratio within 25% post 1000hrs reliability stress

1.2 Applications

LiDAR Application
Synchronous Rectification & Class-D Audio
Envelope Tracking Power Supplies
High Frequency DC-DC Converter

Parameter	Value
V_DS,max	80V
_RDS(on),max @ V_G = 5 V	8mΩ
Q_G,typ @ V_DS = 40 V	6.5nC
I_D_, Pulse	180A
Q_OSS @40V	27.9nC

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Datasheet

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