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INV030FQ012A

30V Bi-directional GaN Enhancement-mode Power Transistor

1. General description

Bi-directional GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCQFN with 6mm x 4 mm package size.

1.1 Features

Bi-directional blocking capability
GaN-on-Silicon E-mode HEMT technology
Ultra-low on resistance

1.2 Applications

High side load switch
OVP protection
Switch circuits in multiple power suppliers system

2. Reliability Tests

Platform (B040E2.5)
Product (INV030FQ012A)
Test Items	Test Conditions	Sample Size (Unit x Lot)	#Fail	Result
HTRB	T=150°C, VD1=24V, 1000hrs	77 x 3	0 Fail	Pass
HTRB	T=150°C, VD2=24V, 1000hrs	77 x 3	0 Fail	Pass
HTGB	T=150°C, VG=5.5V, 1000hrs	77 x 3	0 Fail	Pass
HBM	All Pins	3 x 1	0 Fail	Class 1B
CDM	All Pins	3 x 1	0 Fail	Class C1

Parameter	Value
V_DD,max	30V
R_DD(on),max @ V_G = 5 V	1.2mΩ
Q_G,typ @ V_DD = 15 V	44nC
I_D,DC	80A

Downloads

Datasheet

Product Reliability Report

SPICE Model