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INN040W120A

40V Bi-directional GaN Enhancement-mode Power Transistor

1. Datasheet

Bi-directional GaN-on-Silicon enhancement mode high-electron-mobility-transistor(HEMT) in WLCSP with 1.2 mm x 1.7 mm package size.

1.1 Features

Bi-directional blocking capability
GaN-on-Silicon E-mode HEMT technology
Ultra-low on Resistance

1.2 Applications

High side load switch
OVP protection in smart phone USB port
Switch circuits in multiple power suppliers system

2. Reliability Tests

Platform (B040E2.5)
Product (INN040W120A)
Test Items	Test Conditions	Sample Size (Unit x Lot)	#Fail	Result
HTRB	T=125°C, VD1=32V, 168hrs	77 x 1	0 Fail	Pass
HTRB	T=125°C, VD2=32V, 168hrs	77 x 1	0 Fail	Pass
HTGB	T=125°C, VG=5.5V, 168hrs	77 x 1	0 Fail	Pass
HBM	All Pins	3 x 1	0 Fail	Class 1A
CDM	All Pins	3 x 1	0 Fail	Class C2a

Parameter	Value
V_DD,max	40V
_{RD1D2(on),max} @ V_G = 5 V	12mΩ
Q_G,typ @ V_DD = 20 V	7.2nC
I_D_, DC	10A

Downloads

Datasheet

Product Reliability Report