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INN060FQ043A

60V Enhancement-mode GaN Enhancement-mode Power Transistor.

1. Datasheet

GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCQFN with 4 mm x 3 mm package size.

1.1 Features

GaN-on-Silicon E-mode HEMT technology
Very low gate charge
Ultra-low on resistance
Very small footprint

1.2 Applications

High frequency DC-DC converter
Point of Load
RF envelope tracking
PC charger
Mobile power bank
Motor driver

2. Reliability Tests

Platform (S060E2.5)
Product (INN060FQ043A)
Test Items	Test Conditions	Sample Size (Unit x Lot)	#Fail	Result
MSL3	Ta=30°C, RH=60%, 3 x reflow, 192hrs	25 x 3	0 Fail	Pass
HTRB	Tj=125°C, VD=48V, 1000hrs	77 x 3	0 Fail	Pass
HTRB	Tj=150°C, VD=48V, 1000hrs	77 x 1	0 Fail	Pass
HTGB(+)	Tj=150°C, VG=6.0V, 1000hrs	77 x 3	0 Fail	Pass
HTGB(-)	Tj=150°C, VG=-4.0V, 1000hrs	77 x 3	0 Fail	Pass
TC	-40 to +125°C, Air, 1000Cys	77 x 3	0 Fail	Pass
H³TRB	Ta=85°C, RH=85%, VD=48V, 1000hrs	77 x 3	0 Fail	Pass
uHAST	T=130℃, RH=85%, 96hrs	77 x 3	0 Fail	Pass
Solderability	Pre-Con: 8hrs Pb-free: 245±5°C, 5±0.5s	22 x 3	0 Fail	Pass
DHTOL	BUCK, Vin=36V, Vout=18V, Fsw=600KHz, Tj=125°C, 1000hrs	8 x 3	0 Fail	Pass
HBM	All Pins	3 x 1	0 Fail	Class 1B
CDM	All Pins	3 x 1	0 Fail	Class 2a

Parameter	Value
V_DS,max	60V
_RDS(on),max @ V_G = 5 V	4.3mΩ
Q_G,typ @ V_DS = 30 V	6.2nC
I_D_, Pulse	160A
Q_OSS@ V_{DS =}30V	18nC

Downloads

Datasheet

Product Reliability Report