Innoscience-Product

ISG6134TJ

700V 190mΩ SolidGaN with Si MOSFET Compatibility

1. General description

The ISG6134 SolidGaN IC seamlessly integrates a 700V enhanced mode Gallium Nitride (GaN) FET with a built-in gate clamp and DESAT protection in a conventional TO220 FullPAK package.

1.1 Features

190mΩ E-Mode GaN with Built-In Gate Clamp
700V Continuous, 750V Pulsed Voltage Rating
Wide 8V to 20V Gate Input Voltage Range
Adjustable Turn-On and Turn-Off Slew Rate
Drop-In Replacement for Si MOSFET
Work with Si MOSFET Controllers and Drivers
Zero Reverse Recovery Charge
Short Circuit Protection with Built-In DESAT
Available in TO220 FullPAK Package

1.2 Applications

Boost PFC, QR Flyback Topology
AHB, LLC Topology
AC-DC Power Adaptor, LED Lighting
TV Power, Home Appliance Power

Parameter	Value
VDS,max	700V
RDS(on),typ	138mΩ
RDS(on),max	190mΩ
ID,max	11.5A

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Datasheet