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INN650TA050C

650V GaN Enhancement-mode Power Transistor

1. General description

650V GaN-on-Silicon Enhancement-mode Power Transistor in TOLL package

1.1 Features

Enhancement mode transistor-Normally off power switch
Ultra high switching frequency
No reverse-recovery charge
Low gate charge, low output charge
Qualified for industrial applications according to JEDEC Standards
ESD safeguard
RoHS, Pb-free, REACH-compliant

1.2 Applications

AC-DC converters & DC-DC converters for PSU and power supplies
High power density DC-DC modules
Totem pole PFC
Resonant and soft-switching converters

Parameter	Value
VDS,max	650V
RDS(on),max @ VGS = 6 V	50mΩ
QG,typ @ VDS = 400 V	9.4nC
ID,pulse	77A
QOSS @ VDS = 400 V	107nC
Qrr @ VDS = 400 V	0nC

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Datasheet