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INN040W080A

40V Bi-directional GaN Enhancement-mode Power Transistor

1. Datasheet

Bi-directional GaN-on-Silicon enhancement mode high-electron-mobility-transistor(HEMT) based on advanced low voltage BiGaN Technology with ultra-low on resistance.

1.1 Features

Bi-directional blocking capability
GaN-on-Silicon E-mode HEMT technology
Ultra-low on Resistance

1.2 Applications

High side load switch
OVP protection in smart phone USB port
Switch circuits in multiple power suppliers system

2. Reliability Tests

Platform (B040E2.5)
Product (INN040W080A)
Test Items	Test Conditions	Sample Size (Unit x Lot)	#Fail	Result
HTRB	T=125°C, VD1=32V, 168hrs	77 x 1	0 Fail	Pass
HTRB	T=125°C, VD2=32V, 168hrs	77 x 1	0 Fail	Pass
HTGB	T=125°C, VG=5.5V, 168hrs	77 x 1	0 Fail	Pass
HTOL	Tj=125°C, Load current=7A, 168hrs	8 x 1	0 Fail	Pass
HBM	All Pins	3 x 1	0 Fail	Class 1A
CDM	All Pins	3 x 1	0 Fail	Class C2a

3. VGaN For OVP Application（Dual）Reference Design

3.1 Topology

3.2 Key specifications

Vin：8~22V

Controller IC:SC8571

Iomax:14A

3.3 Applications

Bi-directional switch

OVP Application

OCP Application

Parameter	Value
V_DD,max	40V
R_DD(on),max @ V_G = 5 V	8mΩ
Q_G,typ @ V_DD = 20 V	10.1nC
I_D,DC	14A

Downloads

Datasheet

Product Reliability Report

Demo Manual >: INNEDD001A2