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INV100FQ030C

100V Bi-directional Enhancement-mode GaN Power Transistor

1. General description

Bi-directional GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCQFN with 4.0mm x 6.0 mm package size.

1.1 Features

Bi-directional blocking capability
GaN-on-Silicon E-mode HEMT technology
Ultra-low on resistance

1.2 Applications

BMS battery protection
High side load switch in bi-directional converter
Switch circuits in multiple power supplier system

Parameter	Value
V_DD,max	100V
R_DD(on),max @ V_G = 5 V	3.2mΩ
Q_G,typ @ V_DD = 50 V	66nC
I_D,DC	100A

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