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INN040W048A

40V Bi-directional GaN Enhancement-mode Power Transistor

1. Datasheet

Bi-directional GaN-on-Silicon enhancement mode high-electron-mobility-transistor(HEMT) based on advanced low voltage BiGaN Technology with ultra-low on resistance.

1.1 Features

Bi-directional blocking capability
GaN-on-Silicon E-mode HEMT technology
Ultra-low on Resistance

1.2 Applications

High side load switch
OVP protection in smart phone USB port
Switch circuits in multiple power suppliers system

2. Reliability Tests

Platform (B040E2.5)
Product (INN040W048A)
Test Items	Test Conditions	Sample Size (Unit x Lot)	#Fail	Result
MSL1	T=85°C, RH=85%, 3 x reflow, 168hrs	25 x 2	0 Fail	Pass
HTRB	T=125°C, VD1=32V, 1000hrs	77 x 3	0 Fail	Pass
HTRB	T=125°C, VD2=32V, 1000hrs	77 x 3	0 Fail	Pass
HTGB	T=125°C, VG=5.5V, 1000hrs	77 x 3	0 Fail	Pass
TC	-40 to +125°C, Air, 1000Cys	77 x 3	0 Fail	Pass
H³TRB	T=85°C, RH=85%, VD1=32V, 1000hrs	77 x 3	0 Fail	Pass
H³TRB	T=85°C, RH=85%, VD2=32V, 1000hrs	77 x 3	0 Fail	Pass
HTSL	T=150°C, 1000hrs	77 x 3	0 Fail	Pass
HTOL	Tj=125°C, Load current=7A, 1000hrs	32 x 3	0 Fail	Pass
Drop test	Accelerometer: 1500G Durations: 0.5ms, 90Drops	77 x 1	0 Fail	Pass
Solderability	Pre-Con: 8hrs Pb-free: 245±5°C, 5±0.5s	25 x 3	0 Fail	Pass
HBM	All Pins	3 x 1	0 Fail	Class 1A
CDM	All Pins	3 x 1	0 Fail	Class C2b

3. VGaN For OVP Application（Dual）Reference Design

3.1 Topology

3.2 Key specifications

Vin：8~22V

Controller IC:SC8571

Iomax:14A

3.3 Applications

Bi-directional switch

OVP Application

OCP Application

Parameter	Value
V_DD,max	40V
R_DD(on),max @ V_G = 5 V	4.8mΩ
Q_G,typ @ V_DD = 20 V	15.8nC
I_D,DC	20A

Downloads

Datasheet

Product Reliability Report