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INS1011SD

100V Low-Side Bi-Directional VGaNTM Driver

1. General description

The INS1011 is designed to drive Innoscience’s proprietary 40V to 120V VGaN, enhancement mode bi-directional GaN HEMT with single-gate dual-drain.

1.1 Features

Compatible with AFE and MCU control logic
8uA Low Quiescent Current
Special 5V GATE Drive Voltage for VGaN HEMT
Fast Turn-On/-Off Speed
Capable of Driving Multiple VGaN HEMTs in Parallel
SOP 8-Lead Package

1.2 Applications

Energy Storage System (ESS)
E-Bike, E-Scooter
Battery Backup and UPS
Power and Gardening Tools
Light Electric Vehicles (LEV)

Downloads

Datasheet