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INN100EA070DAD

100V Enhancement-mode GaN Power Transistor

1. General description

GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in En-FCLGA with 3.3 mm x 3.3 mm package size.

1.1 Features

GaN-on-Silicon E-mode HEMT technology
Industry application
Very low gate charge
Ultra-low on resistance
Very small footprint

1.2 Applications

High frequency DC-DC converter
High density DC/DC power module
Synchronous rectification
Motor driver
Solar system MPPT & solar power optimizer

Parameter	Value
VDS,max	100V
RDS(on),typ @ VGS = 5 V	5.8mΩ
RDS(on),max @ VGS = 5 V	7.8mΩ
QG,typ @ VDS = 50 V	3.3nC
IDS,Pulse (TJ = 25˚C)	175A
QOSS @ VDS = 50 V	17.3nC

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Datasheet

Product Reliability Report