Innoscience-Product

30V Enhancement-mode GaN Power Transistor

GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCQFN with 5 mm x 4 mm package size.

Platform (S040E2.5)
Product (INN030FQ015A)
Test Items	Test Conditions	Sample Size (Unit x Lot)	#Fail	Result
HTRB	Tj=150°C, VD=24V, 1000hrs	77 x 1	0 Fail	Pass
HTGB	Tj=150°C, VG=5.5V, 1000hrs	77 x 1	0 Fail	Pass
DHTOL	BUCK, Vin=24V, Vout=5V, Iout=15A, Fsw=500KHz, Tj=125°C, 1000hrs	8 x 1	0 Fail	Pass
HBM	All Pins	3 x 1	0 Fail	Class 1B
CDM	All Pins	3 x 1	0 Fail	Class 2a