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INN030FQ015A

30V Enhancement-mode GaN Power Transistor

1. Datasheet

GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in FCQFN with 5 mm x 4 mm package size.

1.1 Features
  • GaN-on-Silicon E-mode HEMT technology
  • Very low gate charge
  • Ultra-low on resistance
  • Zero reverse recovery charge
1.2 Applications
  • High frequency DC-DC converter
  • Battery charger
  • Battery management system
  • Notebook
  • Industry

2. Reliability Tests

Platform (S040E2.5)
 Product (INN030FQ015A)
Test ItemsTest ConditionsSample Size (Unit x Lot)#FailResult
HTRB Tj=150°C, VD=24V, 1000hrs 77 x 1 0 Fail Pass
HTRB Tj=150°C, VG=5.5V, 1000hrs 77 x 1 0 Fail Pass
DHTOL

BUCK, Vin=24V, Vout=5V, Iout=15A,

Fsw=500MHz, Tj=125°C, 1000hrs

 8 x 1 0 Fail Pass
HBM All Pins 3 x 1 0 Fail Class 1B
CDM All Pins 3 x 1 0 Fail Class 2a

ParameterValue
VDS,max 30V
RDS(on),max @ VG = 5 V 1.5mΩ
QG,typ @ VDS = 15 V 22.8nC
ID, Pulse 300A
QOSS@ VDS = 15V 43nC

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