HV GaN HEMT
Part number Configur
ation
Package VDS max
(V)
RDS(on)_typ
(mΩ)
RDS(on) max
(mΩ)
QG
(nC)
Qoss
(nC)
ID max
(A)
IDPuls max
(A)
Models Datasheet
INN650D140A Single DFN 8X8 650 106 140 3.5 33 17 32 available
INN650DA140A Single DFN 5X6 650 106 140 3.5 33 17 32 on-request
INN650N140A Single WAFER 650 106 140 3.5 33 17 32 on-request
INN650D240A Single DFN 8X8 650 165 240 2 21 12 18 on-request
INN650DA240A Single DFN 5×6 650 165 240 2 21 12 18 available
INN650N240A Single WAFER 650 165 240 2 21 12 18 on-request
INN650DA500A Single DFN 5X6 650 365 500 1.3 10.5 7 9 available
INN650N500A Single WAFER 650 365 500 1.3 10.5 7 9 on-request
INN650N05
(old P/N)
Single WAFER 650 620 800 0.7 5 2 5 available
INN650DA150A Single DFN 5X6 650 106 150 3.5 33 17 32 on-request Contact us
INN650D150A Single DFN 8X8 650 106 150 3.5 33 17 32 available Contact us
INN650N150A Single WAFER 650 106 150 3.5 33 17 32 on-request Contact us
INN650DA260A Single DFN 5X6 650 165 260 2 21 14 18 on-request Contact us
INN650D260A Single DFN 8X8 650 165 260 2 21 14 18 available Contact us
INN650N260A Single WAFER 650 165 260 2 21 14 18 on-request Contact us
INN650DA04
(old P/N)
Single DFN 5X6 650 365 480 1.3 10.5 7 9 on-request Contact us
INN650N04
(old P/N)
Single WAFER 650 360 480 1.3 10 7 9 on-request Contact us
LV GaN HEMT
Part number Configur
ation
Package VDS max
(V)
RDS(on)_typ
(mΩ)
RDS(on) max
(mΩ)
QG
(nC)
Qoss
(nC)
ID max
(A)
IDPuls max
(A)
Models Datasheet
INN40W08
(old P/N)
Bidirection WLCSP 2X2 40 5.5 7.8 12.7 9 15 100 available
INN060W070A* Single WLCSP 2.51×1.51 60 6 7 5.2 22 16 110 available Contact us
INN100W08
(old P/N)
Single WLCSP 1.5×0.99 100 36 47 1.4 6.7 4 50 available
INN100W14
(old P/N)
Dual WLCSP 1.58×3.58 100 19 25 2.75 13.5 7 90 available
INN100W12*
(old P/N)
Single WLCSP 2.51×1.51 100 6 7 5.2 22 16 110 available Contact us
INN150LA070A* Single LGA 2.2×3.2 150 5.6 7 7.6 46.8 28 120 available Contact us
*Sampling - Qualification on-going.
Part Number Naming
Design Support
  • Application Notes

    Here you will find Innoscience’s application notes on how to use InnoGaNTM transistors in your application.

    Document App Notes
    AN001 650V InnoGaN Drive Circuit Design
    AN002 Design considerations of Paralleled GaN HEMT
    AN003 Double Pulse Test Evaluation Board for GaN Devices
  • Device Model

    Here you will find device model information.

    In the table below, you can find device models that describe the typical electrical behavior of InnoGaN devices.
    At present, Innoscience provides four model files: LTspice, Pspice, SIMetrix, and Spectre.
    We have models available for several of our products and we can quickly develop models for other products upon customer request.

    Part number Configuration Package VDS max(V) RDS(on)_typ(mΩ) RDS(on) max(mΩ) QG(nC) Qoss(nC) ID max(A) IDPuls max(A) Models
    INN40W08 Bidirection WLCSP 2X2 40 5.5 7.8 12.7 9 15 100
    click here
    INN060W070A* Single WLCSP 2.51X1.51 60 6 7 5.2 22 16 110
    click here
    INN100W08 Single WLCSP 1.5X0.99 100 36 47 1.4 6.7 4 50
    click here
    INN100W14 Dual WLCSP 1.58*3.58 100 19 25 2.75 13.5 7 90
    click here
    INN100W12* Single WLCSP 2.51X1.51 100 6 7 5.2 22 16 110
    click here
    INN150LA070A* Single LGA 2.2X3.2 150 5.6 7 7.6 46.8 28 120
    click here
    INN650D140A Single DFN 8X8 650 106 140 3.5 33 17 32
    click here
    INN650DA240A Single DFN 5X6 650 165 240 2 21 12 18
    click here
    INN650DA500A Single DFN 5X6 650 365 500 1.3 10.5 7 9
    click here
    INN650N05 Single WAFER 650 620 800 0.7 5 2 5
    click here
    INN650D150A Single DFN 8X8 650 106 150 3.5 33 17 32
    click here
    INN650DA260A Single DFN 5X6 650 165 260 2 21 14 18
    click here
  • Demo Board

    Here you will find the technical documentation related to Innoscience’s demo boards. 

    Innoscience can also assist you in developing your system solution with InnoGaN devices by designing and developing demo board(s) for your application(s).

    Type

    Demo model

    Picture

    Specifications

    Topology

    AC-DC(HV)

    DB-PD33V2

     33W/1C

    QR flyback

    DB-PD33V3

     33W/(A+C)

    QR flyback

    DB-PD65V2

     65W/1C

    QR flyback

    DB-PD65V4

     65W/(A+2C)

    QR flyback + buck

    DB-PD65V5

     65W/(A+2C)

    ACF + buck

    DB-PD100V2

     100W/(2A+2C)

    Boost PFC+ QR flyback +buck

    DB-PD120V2

     120W/1C

    Boost PFC+ACF

    DB-LED200V1

     200W/(LED Driver)

    Boost PFC+LLC

    DB-PD200V2

     200W/(2A+3C)

    Boost PFC+LLC+buck

    Type

    Demo model

    Picture

    Specifications

    Topology

    DC-DC (LV)

     300W 48V DC/DC module

     300W/48V

     Full bridge LLC

     300W 1/8 brick power module 

     300W/12V

     Hard switch full bridge

     100W car notebook Charger

     20V/5A

     Buck-Boost

     90W 1.2MHz car charger 

     15V/6A

     Sync Buck 

    Lidar (LV)

     Dual channel lidar

     30A/1.4ns

     Lidar

    Charging protection (LV)

     Overvoltage protection board

     8A max

     Charge pump-OVP

Gate Drivers/Controllers

GaN transistors need optimized gate drivers / controllers to exploit their full potential. Below you can find a list of gate drivers/controllers typically used to drive InnoGaN transistors.
Innoscience with its partners can also assist you in developing a specific gate driver or controller for your specific application.
If you are a design house, we are open to work with you in developing specific solutions by using available or customized InnoGaN devices for a specific application or customer.

Part number

VDS_max (V)

RDS(on)_typ(mΩ)/
RDS(on)_max (mΩ)

QG (nC)

ID max (A)

Gate Driver/Controller IC

INN650D140A

INN650D150A

650

106/140

115/150

3.5

3.5

17

17

On Semi - NCP1342  (QR)

Joulwatt - JW1515H  (QR)

Southchip - SC3021C  (QR)

Meraki -MK2697G  (QR)

TI - UCC28056 (PFC)

On Semi - NCP1622 (PFC)

On Semi - NCP1937  (PFC+QR)

NXP - TEA2017AT (PFC+LLC)

MPS - HR1211  (PFC+LLC)

On Semi - NCP51530/NCP51820 (Half Bridge)

Heyday - HEY1011

INN650DA140A

INN650DA150A

650

106/140

115/150

3.5

3.5

17

17

INN650D240A

INN650D260A

650

165/240

165/260

2

2

12

14

INN650DA240A

INN650DA260A

650

166/240

166/260

2

2

12

14

INN650DA500A

650

500

1.3

7

On Semi - NCP1342  (QR)

Joulwatt - JW1515H  (QR)

Southchip -SC3021C  (QR)

Meraki - MK2697G  (QR)

IN100W12

100

7/6

5.2

16

Monolithic Power Systems - MP8699B

uPI Semi – 1966e

Monolithic Power Systems- MPQ1918

Texas Instruments - LMG1205

INN100LA070A

 150  7/5.6  7.6  28 Texas Instruments - LMG1210

MinDCet - MDC901

INN40W08

 40  7.8  12.7  15 AW32280CSR,

Southchip - SC8571

Nuvoltatech - NU2205

Work With Us
  • Original Equipment Manufacture (OEM), system integrators and tier-1

    You can develop your system solution(s) by using InnoGaN device. We assure excellent performance, reliability, support, security of supply, large capacity and lowest prices.
    We can also assist you in developing your system solution with InnoGaN devices as well as we can also customize InnoGaN devices towards your specifications.

    You can develop your system(s) by using InnoGaN device. Please check our product list to find the InnoGaN device suitable for your application(s) and the associated gate driver/controller

    Innoscience can also assist you in developing your system solution with InnoGaN devices by providing device samples, available demo boards or designing and developing demo board(s) for your application(s).

    You don’t find what you need? We can also customize InnoGaN design towards your specifications. 

    We have an established approach to develop customized solutions: once we narrow down together the specifications, we can design InnoGaN devices towards your specifications. We provide engineering samples within 3 to 6 months and, afterwards, we are ready for mass production with qualified devices within 6 months.

    Overall, we assure excellent performance, reliability, security of supply, large capacity and lowest prices thanks to our large volume capabilities, 8-inch wafer size and advanced high-throughput manufacturing tools. 

  • Design House

    As a design house, you can use InnoGaN device to develop gate drivers, controller, boards for specific applications etc... We can also become a partner for specific applications or customer needs.

    As a design house, you can use InnoGaN device to develop boards or gate driver/controller  for specific applications. If needed, our engineers will be happy to support you.  

    We can also become a partner for specific application or customer needs.

    For instance, you can develop a specific gate driver/controller for an application.  Once you have developed a gate driver/controller for InnoGaN, you can co-package and commercialize your gate driver together with InnoGaN transistors. We can also assist you in the co-packaging part and discuss the best path for commercialization. 

  • Others

    At Innoscience we believe in collaboration. Please reach us to explore your needs, what we can do together and what Innoscence can do for you. We all want GaN technology to be successful and widespread in the market!

Where To Buy

InnoGaN technology are available worldwide via our local representative who will be happy to support you.
Please select your region below to find your local representative to discuss your needs, a possible collaboration or directly buy InnoGaN device or demo boards.

  • Innoscience Europe NV.

    Philipssite 5 bus 1, 3001, Leuven, Belgium

    Dr. Denis Marcon

    denismarcon@innoscience.com
  • Innoscience America, Inc.

    5451 Great America Pkwy Santa Clara, CA, USA

    Yi Sun

    yisun@innoscience.com
  • Innoscience Korea Inc.

    T-Tower 1818, Yangji-ro 21 Beon-gil, Gwangmyeong-si, Gyeonggi-do, 14345, Korea

    KE Hong

    kehong@innoscience.com
  • Innoscience Shenzhen

    37-36F, Building 1, No. 385 Huide Mansion, Mintang Road, Longhua District, Shenzhen

    Chris Ke 柯善勇

    chriske@innoscience.com
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