Allegro’s innovative gate drivers empower designers to achieve Titanium-grade efficiency and best-in-class power density for demanding AI and edge computing applications

CHINA & USA – November, 2025 –Innoscience (HKEX:-2577.HK), the world's leading supplier of high-performance and high-reliability GaN-on-Si power solutions and  Allegro MicroSystems, Inc. (“Allegro”) (Nasdaq: ALGM), a global leader in power and sensing solutions for motion control and energy-efficient systems, today announced a groundbreaking 4.2kW all-GaN reference design from Innoscience that features Allegro's advanced gate driver technology. This innovative solution is poised to redefine power supply units (PSUs) for next-generation AI data center and edge computing, leveraging the combined strengths of both companies to unlock unprecedented efficiency, power density, and accelerate design cycles.

Innoscience's new 4.2kW reference design integrates Innoscience’s proprietary GaN power transistors with Allegro’s flagship Power‑Thru™ AHV85110 isolated gate driver, featuring a self-powered technology and integrated isolated bias supply. This unique pairing empowers engineers to achieve Titanium-grade power efficiency and power densities exceeding 100 W/in³, dramatically simplifying system design and enabling a significant reduction in passive component count.

“Innoscience is driving efficiency and performance benchmarks for GaN adoption in data centers,” said Larry Chen, Vice President of Product Application at Innoscience. “By combining our leading GaN power devices with Allegro’s advanced driver technology, we offer a comprehensive power supply solution that helps engineers optimize size, design efficiency and power density and accelerates time-to-market for next-generation AI solutions.”

A Reference Design Engineered for Power Density and Efficiency

Developed by Innoscience, the 4.2kW reference design showcases the use of Innoscience’s latest GaN FETs and Allegro’s AHV85110 gate driver. The design features a full all-GaN architecture enabling compact and efficient power conversion suited for AI workloads and hyperscale deployments.

In addition to enhancing switching performance, Allegro’s AHV85110 isolated gate driver features low 2.2pF common-mode capacitance—five to 10 times lower than traditional solutions—significantly reducing electromagnetic interference (EMI). Its integrated bias power supply further simplifies GaN gate driver implementation, addressing one of the key hurdles in high-frequency power system design. This integration directly simplifies the driver circuit design, reducing the passive component count on the driver card by 80% and contributing to a 15% reduction in system-level components. The driver’s low-profile package also enables seamless placement with top-side and dual-side cooled power packages, allowing for superior system thermal design.

The design of the AHV85110 exemplifies Allegro’s approach to innovation: creating foundational technologies that empower engineers to solve complex system-level problems. “The inclusion of our AHV85110 gate driver in this reference design is a great demonstration of what's possible with today's GaN technology”, said Vijay Mangtani, Vice President of Power Products, Allegro MicroSystems. “At Allegro, our core philosophy is to be a true technology partner for our customers. We work closely with them to understand their toughest challenges and provide the foundational solutions they need to innovate and lead. Our gate driver portfolio is a perfect example of how we empower engineers to achieve new levels of performance.”

Driving GaN Adoption in AI Data Centers

Gallium nitride (GaN) is fast becoming a preferred choice in power systems where size, speed and efficiency are paramount. As data centers continue to scale to support AI and edge computing, designers require solutions that reduce losses, save space, and meet stringent sustainability targets.

This reference design empowers power supply designers by offering:

• A full all-GaN solution with integrated magnetic design
• A 30% increase in power density over comparable solutions
• Simplified design through Allegro’s integrated bias gate driver
• Optimized thermal and layout performance

Availability

The 4.2kW all-GaN reference design is available now from Innoscience, with product documentation, efficiency data, and design files available upon request.

Please visit reference design solutions page at https://www.innoscience.com/mtsc/uploads/Ckeditor/Files/2025-11-14/DB047-INNDAD4K2A1-4.2kW_PSU_Demo_Manual-Rev1.0-en.pdf

To discover how Allegro’s portfolio of high-performance isolated gate drivers can help you unlock new levels of efficiency and power density in your own designs, or to explore a technology partnership with us, please visit our gate driver solutions page at https://www.allegromicro.com/en/products/motor-drivers/gate-drivers.

About Allegro MicroSystems   

Allegro MicroSystems, Inc. is leveraging more than three decades of expertise in magnetic sensing and power ICs to propel automotive, clean energy and industrial automation forward with solutions that enhance efficiency, performance and sustainability. Allegro’s commitment to quality drives transformation across industries, reinforcing our status as a pioneer in "automotive-grade" technology and a partner in our customers' success. For additional information, visit https://www.allegromicro.com/en/.

About Innoscience

Innoscience is the world’s leading GaN solution provider, with an integrated device design, wafer fabrication, and packaging ecosystem. Headquartered in China with a global footprint, Innoscience’s mission is to enable ubiquitous GaN power solutions for applications across mobile, industrial, automotive, and datacenter infrastructure. Visit: www.innoscience.com