We develop and mass manufacture high performance GaN

Innoscience’s core tech team is formed by experts and veterans of the semiconductor and (power) electronic industry. They come from the world-class leading companies and have a large experience in the development, industrialization and high-volume manufacturing of Silicon and GaN technology.

Moreover, Innoscience has also a team of experts in system engineering that develops demo boards and other circuits for specific applications or customers in order to show the potential of Innoscience’s GaN devices and ease their adoption.

Innoscience was founded on December 17, 2015 with the aim to create the largest manufacturing site and Integrated Device Manufacture (IDM) fully focused on GaN technology in the world.

Innoscience executives understood from the very beginning that to enable the wide adoption of GaN technology in the market, performance and reliability were just the starting point. They understood that the power electronics industry demanded 3 additional key aspects. First, they demand an affordable GaN technology, as the industry is not willing to pay a big premium to use GaN device; second, they need large manufacturing capacity capable to absorb large volume and associated fluctuations and, third, they require security of supply such that they can develop their products and systems by using GaN devices without worrying about possible production discontinuation caused by e.g. change of supply product strategy.

Therefore, Innoscience understood that only by focusing and dramatically scaling-up the volume of GaN device manufacturing and controlling its own production fabs, it would be possible to address the three requirements of the electronic industry (price, volume and security of supply).

For this reason, from the beginning Innoscience has strategically focused on 8-inch wafer size, that guarantees almost a factor of 2 more devices per wafer with respect to a 6-inch wafer. Next to this, Innoscience has decided to develop a Silicon compatible process flow such that years of learning and optimization for the mass production of Silicon transistors could be leveraged for the production of GaN wafers.

Today, Innoscience has achieved its initial objective. Thanks to the two large 8-inch GaN-on-Si fabs equipped with the latest generation of (silicon) 8-inch production tools, Innoscience is the largest manufacturing site and Integrated Device Manufacture (IDM) fully focused on GaN technology in the world.

Innoscience is producing today 10,000 wpm (wafers per month) and keeps expanding its production capacity towards and beyond 70,000 wpm.

We could not have achieved this without the support of our international world-class investors that among others are CMB international, SK, ARM and CATL.

We design, develop and mass manufacture highly performing and reliable GaN devices for a wide range of applications and voltages (30V-650V).

Thanks to our advance lithography capabilities, we produce devices with small gate length that results in better device performance. We offer to our customers a one-stop-shop where to find both low voltage and high voltage devices with excellent performance and reliability. We assure security of supply, large capacity and lowest prices thanks to our large volume capabilities, 8-inch wafer size and advanced high-throughput manufacturing tools. We believe that this is what is required by the industry to commercialize their systems with GaN device inside.

We keep innovating and improving our devices technology to make sure Innoscience stays at the forefront of GaN technology. We have an established roadmap addressing several application needs and we are open to discuss with our customers their needs in order to develop devices towards their specifications.