HV GaN HEMT
HV GaN HEMT

HV GaN HEMT

650-1200V Enhancement-Mode Gallium Nitride Power Devices.
Overview
These 650-1200V enhancement-mode GaN power devices are primarily used in consumer electronics, power management, data centers, automotive electronics, and other fields. The product series includes multiple package types and a comprehensive range of on-resistance values to suit various drive applications.‌
Key Advantages
High breakdown voltage and reliability
Fast switching characteristics
High efficiency with low energy loss
Zero reverse recovery charge
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