Intrinsic Reliability Design, Lifetime Model & FIT

Intrinsic Reliability Design
Innoscience defines product specifications based on the device's application voltage, with performance guaranteed through reliability design margins.

Gate Reliability Design Capability

Drain Reliability Design Capability

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Lifetime Modeling
Innoscience builds its reliability lifetime models based on the industry’s most conservative methodology, the E-Model, ensuring highly robust lifetime predictions.

Gate Lifetime Model

Drain Lifetime Model

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Innoscience Leads Globally in GaN Shipments and Reliability Data Volume

With more than 760 million equivalent device operating hours of reliability data, Innoscience has validated the long-term stability and ultra-low failure rates of its products under high-voltage and high-temperature conditions.

The Most Extensive GaN Reliability Statistical Database
The Most Extensive GaN Reliability Statistical Database
Total 760+ Million Equivalent Device Hours @ 700 V and 150 0C through 2025
Lowest Failure Rate (FIT)
Lowest Failure Rate (FIT)
Total 0.15 FIT Rate @ 700 V and 100 0C through 2025

Learn More About Our Reliability Management

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