As a critical sensor for high-level autonomous driving, LiDAR systems benefit significantly from GaN technology. Compared to traditional MOSFETs, GaN offers lower parasitic capacitance and faster switching speeds, allowing LiDAR to emit narrower laser pulses that substantially improve resolution and ranging accuracy. Additionally, GaN supports higher narrow-pulse currents, dramatically increasing LiDAR's peak power and significantly extending its effective detection range. This enables earlier identification of distant obstacles, provides longer system reaction time, and makes autonomous driving safer and more reliable.
Reference Designs
Single-Channel LiDAR Drive Evaluation Board
Innoscience's single-channel LiDAR evaluation board utilizes the low-voltage 100V GaN device INN100W135A-Q, featuring extremely low switching loss and high-speed switching characteristics. It achieves a pulse width of 1.5ns and peak current of 74.93A, delivering 13× faster turn-on speed compared to conventional solutions.
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