INNO Reliability Laboratory.

Comprehensive reliability capabilities spanning both wafer-level and package-level testing.

At the package level, our reliability qualification covers device-level, environmental, and DHTOL-related reliability evaluations—ensuring robust performance across demanding application conditions.

Function
Wafer-Level Reliability
Description
Wafer-Level Reliability
Device hour
or Sample
Wafer-Level Burn-In
BVD/TDDB/ BVG/TDSB
More than 1,200,000 ea
Description
Wafer-Level Reliability
Device hour or Sample
Wafer-Level Burn-In
BVD/TDDB/ BVG/TDSB
More than 1,200,000 ea
Function
Device-Related Reliability
Description
Wafer-Level Reliability
Device hour
or Sample
High Temperature Gate Bias
HTGB
42,659,088
High Temperature Reverse Bias
HTRB
36,851,952
Low Temperature Gate Bias
LTGB
7,360,584
Low Temperature Reverse Bias
LTRB
3,823,680
Environmental Reliability
Description
Wafer-Level Reliability
Device hour
or Sample
Temperature-Humidity Bias
THB(H3TRB)
26,138,784
Highly Accelerated Stress Test
HAST
5,203,584
Rapid Thermal Cycling
TC
48,136,450
Thermal Shock
TS
1,674,288
Intermitent Operating Life
IOL
1,123,000
High Temperature Storage
HTS
5,750,640
Low Temperature Storage
LTS
1,471,176
System-Level Reliability (DHTOL)
Description
Wafer-Level Reliability
Device hour
or Sample
High-Power Power Module Burn-In
Buck/Boost/QR/ LLC/Always on
More than 5,000 sets (DHTOL calculate the system sets)
Hard Switching / Soft Switching Burn-In
H-Bridge
More than 5,000 sets (DHTOL calculate the system sets)
Auxiliary Equipment
Description
Wafer-Level Reliability
Device hour
or Sample
Reflow Soldering Equipment
Reflow
Support tool not calculate device hour
Scanning Acoustic Microscope (SAM)
CSAM
Support tool not calculate device hour
X-Ray Inspection System
X-RAY
Support tool not calculate device hour
Description
Wafer-Level Reliability
Device hour or Sample
High Temperature Gate Bias
HTGB
42,659,088
High Temperature Reverse Bias
HTRB
36,851,952
Low Temperature Gate Bias
LTGB
7,360,584
Low Temperature Reverse Bias
LTRB
3,823,680
Description
Wafer-Level Reliability
Device hour or Sample
Temperature-Humidity Bias
THB(H3TRB)
26,138,784
Highly Accelerated Stress Test
HAST
5,203,584
Rapid Thermal Cycling
TC
48,136,450
Thermal Shock
TS
1,674,288
Intermitent Operating Life
IOL
1,123,000
High Temperature Storage
HTS
5,750,640
Low Temperature Storage
LTS
1,471,176
Description
Wafer-Level Reliability
Device hour or Sample
High-Power Power Module Burn-In
Buck/Boost/QR/ LLC/Always on
More than 5,000 sets (DHTOL calculate the system sets)
Hard Switching / Soft Switching Burn-In
H-Bridge
More than 5,000 sets (DHTOL calculate the system sets)
Description
Wafer-Level Reliability
Device hour or Sample
Reflow Soldering Equipment
Reflow
Support tool not calculate device hour
Scanning Acoustic Microscope (SAM)
CSAM
Support tool not calculate device hour
X-Ray Inspection System
X-RAY
Support tool not calculate device hour
    Rigorous
    Validating the stability of gallium nitride (GaN) semiconductors under extreme operating conditions.
    Large-Sample Testing
    Analysis of large batches ensures statistical significance.
    High-Volume Testing
    High-frequency testing enables massive data collection and verification.
    Build a Model
    Train with inspection data to develop a reliability model for process improvement.
    Accelerate Your GaN Innovation
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