As a third-generation semiconductor material, GaN brings revolutionary improvements to server power supplies through its high-frequency characteristics, low conduction losses, and excellent thermal management capabilities. It increases power conversion efficiency to over 96%, significantly surpassing traditional Titanium efficiency standards and substantially reducing data center energy consumption. Simultaneously, the high power density of GaN devices enables 30%-50% reduction in power supply volume, facilitating higher computational density. Their low heat generation characteristics further reduce cooling requirements and lower air conditioning energy consumption, driving data center PUE below 1.2. This comprehensive optimization from device to system level provides crucial support for building green, low-carbon data centers.
Reference Designs
12kW 800V-50V HVDC Solution
Adopting an All-GaN LLC architecture, the 12 kW 800V-to-50V HVDC solution achieves full-load efficiency up to 98.2% and peak efficiency over 98.6%. Efficient and compact for liquid cooling deployment, it serves as a cabinet IBC to deliver lower energy consumption and higher power density power supply for MGX-architecture AI computing centers.
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