The high-frequency, high-efficiency characteristics of GaN technology significantly reduce the size and weight of driver power supplies while enabling higher power density. GaN devices can substantially increase switching frequency, reducing system energy consumption and heat generation. This results in LED driver solutions that are more compact, efficient, and reliable—particularly suitable for high-power lighting and space-constrained application scenarios, thereby advancing the development of energy-efficient LED lighting.
Reference Designs
240W LED Driver Solution
The 240W LED driver solution adopts a PFC+LLC topology structure, utilizing InnoGaN to replace traditional Si MOSFETs. With a peak efficiency of 95.6%, it delivers higher power density (a 26% improvement over Si-based solutions) and enhanced power conversion efficiency, contributing to more compact and lightweight system designs.
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