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Cumulative GaN Units Shipped
December, Innoscience was founded.
December, Zhuhai fab completed and launched production.
July, First qualified wafer rolled off the line.
June, Mass production of low-voltage GaN products; high-voltage GaN products passed JEDEC qualification.
August, Mass production of high-voltage GaN products.
June, Shipped 1 million high-voltage devices and 5 million low-voltage devices.
September, Suzhou fab completed.
April, Achieved automotive-grade certification: IATF 16949:2016.
June, Suzhou fab ramped to mass production; 8-inch GaN-on-Si shipments surpassed 10 million units.
November, Combined HV/LV GaN shipments exceeded 40 million units; R&D centers established in the U.S., Europe, and Korea.
July, First GaN application inside a smartphone using an innovative bidirectional switch replacing two silicon devices.
September, First GaN application in NEV battery manufacturing.
October, 8-inch GaN-on-Si shipments surpassed 100 million units.
April，Shipments surpassed 200 million units.
August，Shipments surpassed 300 million units.
November，New R&D building completed and inaugurated.
December，Shipments surpassed 500 million units.
December, Innoscience listed on the Hong Kong Stock Exchange.
