The BMS is a critical component for ensuring battery safety. Traditional MOSFETs contain a body diode that prevents bidirectional blocking, necessitating back-to-back MOSFETs for charge-discharge protection in conventional BMS designs. Leveraging GaN's inherent lack of a body diode, Innoscience has developed the VGaN series specifically for BMS applications. A single VGaN device can replace two MOSFETs, reducing conduction resistance and heat generation by half while lowering temperature rise. This significantly decreases the PCB area required for the BMS power loop, facilitating more compact and lightweight battery pack designs. The solution enhances performance while reducing total system cost and improving product competitiveness.
Reference Designs
16S/120A Low-Side BMS Solution
The INNDBMS120LS4 utilizes 100V bidirectional VGaN devices for charge-discharge control and protection, with drive signals provided by the INS1011SD. Sixteen VGaN devices replace 18 pairs of Si MOSFETs (36 devices), reducing board space and power losses while comprehensively lowering system costs.
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