Fast Charging/Adapters

As a third-generation semiconductor material, Gallium Nitride (GaN) has become the core of the fast-charging technology revolution. Compared to traditional silicon, GaN offers a higher breakdown electric field and superior electron mobility, allowing fast-charging adapters to operate at higher frequencies. This results in significantly smaller sizes (with greatly increased power density), higher efficiency (with markedly reduced energy loss and heat generation), and higher power levels—all while maintaining safety and meeting users' dual demands for portability and rapid charging capability.