February 28, 2022 – Innoscience Technology, a company founded to create a global energy ecosystem based on high performance, low-cost gallium-nitride-on-silicon (GaN-on-Si) power solutions, will take partin the Applied Power Electronics Conference (APEC) event held in Houston, Texas on March 20-24, 2022.

Dr Denis Marcon, General Manager, Innoscience Europe, was chosen to be among the speakers at this prestigious international industry event. He will give a presentation entitled: “Applications, Technology Optimization and Manufacturing of 8-inch GaN-on-Si technology”.

During the presentation, Dr Marcon will discuss how Innoscience is addressing the needs of mass manufacturing GaN, the reliability of GaN and the advance tests that Innoscience has been performing on its devices. He will also give some examples of applications that take advance of Innoscience’s GaN-on-Si normally-off (e-mode) device technology such as PD chargers, DC-DC converters for data centers and laser driver for LiDAR .

Innoscience will also exhibit at the event at booth 200, showcasing its unique, sector-leading technologies. The company is the world’s largest Integrated Device Manufacturer (IDM) fully focused on GaN technology, with a monthly capacity of 10,000 8-inch wafers per month. This capacity is set to grow to 70,000 by 2025. 

Innoscience's booth will features several low and high voltage demos, including a collaborations with specialized gate driver houses Heyday (www.heyday-ic.com) and MinDCet (www.mindcet.com). Innoscience's GaN HEMT devices can, of course, be used in conjunction with other commercially available gate drivers from TI, On-Semi, STM, Joulwatt, Southchip, NXP, MPS, Meraki and Nuvoltatech.The company’s devices range from low voltage (30V-150V) to high voltage (650V) and are widely used in in applications from USB PD chargers/adapters to data centers, mobile phones and LED drivers.

Dr Marcon commented: “As a global leader in GaN-on-Si power solutions, it’s an honor to be invited to showcase our technology and capabilities at this leading international event. We look forward to sharing our insights with the delegates and exploring further applications for our unique technology offering – we have the capability to rapidly design and manufacture in high volumes to support customer needs wherever in the world they are located.”

For further information visit https://www.innoscience.com.

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About Innoscience

Innoscience is an Integrated Device Manufacturer (IDM) founded in December 2015 with investment from venture capitals from the world. With the development of new technologies, the electric power grid and power electronic systems across the world are undergoing a massive transformation. Our vision is to create an energy ecosystem with effective and low-cost Gallium-Nitride-on-Silicon (GaN-on-Si) power solutions. In November 2017, Innoscience first established a mass production 8-inch wafer line for GaN-on-Si devices. As a cutting-edge GaN technology provider, Innoscience’s 1,400+ employees and over 300 R&D experts are dedicated to delivering high performance and high reliability GaN power devices that can be widely used in diverse applications including cloud computing, electric vehicles (EV) and automotive, portable devices, mobile phones, chargers and adapters. For more information, please visit www.innoscience.com. 

Contact Media:  

Peter Rogerson, Innoscience

peterrogerson@innoscience.com

+1 408-502-4626

Benoit Simoneau, 514 Media

benoit@514-media.com

+44 (0) 7891 920 370