140W and 1kW All-GaN reference designs deliver ultra-high efficiency and power density for medium- and high-power applications.

As end applications such as laptops, gaming consoles, electric two-wheelers, robotics, and industrial equipment continue to evolve, demand for medium- and high-power AC-DC power supplies with higher efficiency, smaller size, greater power density, and improved reliability continues to grow.

Leveraging the inherent advantages of third-generation gallium nitride (GaN) technology—including zero reverse recovery charge, low switching loss, and high switching frequency—Innoscience has introduced two new All-GaN AC-DC power reference designs. Covering power levels from 140W to 1kW, these designs address applications ranging from PD fast chargers to robotics, e-mobility, telecommunications, and industrial power systems.

The new reference designs enable customers to develop compact, high-performance power solutions while accelerating time-to-market.

INNDAD140C1: 140W All-GaN PFC + AHB PD Fast Charger Reference Design

Designed for PD 3.1 fast charging, the INNDAD140C1 targets laptops, gaming consoles, and other high-performance portable devices.

The design adopts a highly efficient PFC + Asymmetrical Half-Bridge (AHB) topology, with the entire primary power stage built using Innoscience GaN devices. The result is an excellent balance of compact size, high efficiency, and wide input voltage compatibility, making it an ideal solution for next-generation consumer power adapters.

Key Specifications

• Input voltage: 90–264Vac
• Maximum output: 28V / 5A (140W)
• Efficiency:
  • 94.25% @ 90Vac
  • Peak efficiency 96.21% @ 264Vac
• Power density: 31.86W/in³
• PCBA dimensions: 60 × 60 × 20 mm
• Standby power consumption: 100mW @ 230Vac
• Switching frequency:
  • PFC: up to 140kHz
  • AHB: up to 130kHz
• Thermal performance:
  • Maximum PFC inductor temperature: 92.1°C
  • Transformer temperature: 81.1°C
• Compliance: Meets EN55022 EMI requirements and is suitable for safety certification.

High-Efficiency PFC + AHB + Synchronous Rectification Architecture

The design employs a proven PFC + AHB + synchronous rectification (SR) topology. By implementing All-GaN devices throughout the power path, switching losses are minimized while enabling higher efficiency and a more compact design.

• Power Factor Correction (PFC)

The PFC stage utilizes the ISG6117TM (700V/210mΩ, TO252-4L), a co-packaged GaN device featuring integrated lossless current sensing. This significantly reduces conduction loss and improves efficiency, particularly under low-line (90Vac) operation.

• Asymmetrical Half-Bridge (AHB)

The AHB stage incorporates the ISG6233AQH (700V/130mΩ, QFN 6×8), an integrated half-bridge GaN device with built-in driver support for 8–20V gate drive. Its high level of integration simplifies circuit design while enabling further miniaturization.

• Synchronous Rectification (SR)

The secondary stage adopts the INN100EBD035DAD (100V, En-FCLGA 5×6 package), featuring an ultra-low 3.5mΩ RDS(on). The package is manufacturing-friendly and helps significantly reduce rectification losses under high-frequency, high-current operation.

Typical Applications

• 140W PD 3.1 laptop chargers
• Gaming console power adapters
• High-performance portable device adapter

INNDAD1K0A1 – 1kW All-GaN PFC + LLC Reference Design

The INNDAD1K0A1 is a 1kW AC-DC reference design developed for 500W–1kW applications including robotics, electric motorcycles, networking equipment, and industrial power supplies.

The design combines a bridgeless totem-pole PFC with a high-frequency LLC resonant converter, using Innoscience GaN devices for every primary power switch. Compared with conventional silicon-based designs, the All-GaN architecture delivers significantly higher efficiency and power density while reducing system size.

Key Specifications

• Input voltage: 90–264Vac
• Output voltage: 36–54.6V (48V nominal)
• Output power:
  • 500W under 90–176Vac input
  • 1kW under 176–264Vac input
• Peak efficiency: 97.1%
• Full-load efficiency at 90Vac: 95.1%
• PCBA dimensions: 143 × 70 × 27 mm
• Power density: 60.6W/in³
• Switching frequency:
  • Totem-pole PFC: 62.5kHz (typ.)
  • LLC: 200–600kHz

Bridgeless Totem-Pole PFC + LLC + Synchronous Rectification

The reference design adopts a bridgeless totem-pole PFC, high-frequency LLC resonant converter, and synchronous rectification, delivering exceptional efficiency for high-power applications.

• Bridgeless Totem-Pole PFC

The PFC stage uses:

• 2 × INN650TA050C
• 2 × ISG6123TA

GaN devices feature low gate charge and zero reverse recovery charge, significantly reducing switching and driver losses in CCM totem-pole PFC applications.

The ISG6123TA integrates gate-driver clamping and supports 10–24V drive voltage while providing over-current protection, over-temperature protection, and Miller clamp functionality for improved system robustness. It is compatible with conventional Si MOSFET gate drivers and controllers.

• High-Frequency LLC Resonant Converter

The LLC stage utilizes two INN650TA080BS high-voltage GaN devices in TOLL packages with dedicated Kelvin Source (SK) pins to minimize parasitic effects.

Compared with silicon MOSFETs of similar RDS(on), the devices exhibit superior charge characteristics, enabling reduced dead time and magnetizing current, lower switching losses, higher operating frequency, and smaller magnetic components.

• Synchronous Rectification (SR)

The secondary stage employs two INN150EB022EAD low-voltage GaN devices in EN-FCLGA 5×6 packages, compatible with standard DFN5×6 silicon MOSFET footprints.

These devices offer excellent on-resistance and thermal performance while supporting high-frequency operation with lower switching losses, helping maximize overall system power density.

Typical Applications

• Robot and quadruped robot battery chargers
• Electric motorcycle and electric two-wheeler battery chargers
• Telecommunications and networking power supplies
• High-power horticultural lighting power supplies

Driving the Next Generation of High-Performance AC-DC Power

From 140W PD fast chargers to 1kW battery chargers and industrial power supplies, Innoscience continues to push the performance boundaries of AC-DC power conversion with its proprietary GaN technology.

Whether developing ultra-compact consumer adapters or highly reliable, high-power industrial power supplies, designers can leverage these new All-GaN reference designs to achieve higher efficiency, greater power density, and faster product development.

To obtain complete demo documentation and the device bill of materials (BOM), please visit the Innoscience website or contact our technical team at MARCOM@innoscience.com for technical support and customized power solution development.