Innoscience is using the latest generation of Aixtron MOCVD reactor G5+C™ to grow Innoscience 8-inch GaN-on-Si wafers. 

Innoscience has developed proprietary 8-inch GaN-on-Si epi-buffer technology optimized for high-voltage (HV) and low-voltage (LV) device.

By controlling in-house its own epi-technology, Innoscience can quickly adapt the epi-process towards specific needs or applications.

Innoscience keeps on striving to further optimize and improve its epi-technology in terms of performance and throughput to assure highly performing and cost-effective GaN-on-Si technology. 

Innoscience has been growing more than 10,000 wafers/month that have been successfully processed to produce HV and LV devices that were shipped and used by customers.

Innoscience GaN-on-Si epitaxial process have been optimized to systematically obtain uniform and reproducible crack-free epi-wafers with low dislocations density and defects.