Devices target high power, high frequency, and robust power designs
04th April 2024 – Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, today announced the INS1001DE which is designed to drive single-channel GaN HEMTs in either low-side, high-side, or secondary-side SR applications.
Min Chen, VP of IC Design at Innoscience, comments: “The INS1001DE is perfectly matched to optimize the performance of e-mode GaN HEMTs and particularly innoscience’s e-mode InnoGaN. A strong driving capability and fast propagation delay, along with input noise deglitching and built-in UVLO, OVP, OTP protection features, make the INS1001DE extremely suitable for high power, high frequency, and robust power GaN applications.”
The new gate driver has dual non-inverting and inverting PWM inputs, enabling flexible operation with controller, opto-coupler and digital isolator. Independent Pull-up and Pull-down outputs facilitate the control of turn-on and turn-off speeds. Driver voltage is user-programmable to suit different gate requirements using an external resistor divider. An integrated 5V LDO is included to supply digital isolator or other circuitry in high-side applications.
Featuring a wide 6V to 20V operating voltage range and with a strong 1.3Ω Pull-up and 0.5Ω Pull-down resistance, the INS1001DE is available in thermally-enhanced DFN3x3-10L package. Applications include switch-mode power supplies, AC/DC and DC/DC converters, Boost, Flyback, Forward, Half-Bridge and Full-Bridge converters, synchronous rectification circuits, solar inverters, motor control and UPS.
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About Innoscience
Innoscience is an Integrated Device Manufacturer (IDM) founded in December 2015 with the support of international prestigious investors. With the development of new technologies, the electric power grid and power electronic systems across the world are undergoing a massive transformation. Our vision is to create an energy ecosystem with effective and low-cost Gallium-Nitride-on-Silicon (GaN-on-Si) power solutions. In November 2017, Innoscience first established a mass production 8-inch wafer line for GaN-on-Si devices and, in order to fulfill the rapidly growing power demands, Innoscience has inaugurated a new facility in September 2020. As a cutting-edge GaN technology provider, Innoscience’s 1,600+ employees and over 500 R&D experts are dedicated to delivering high performance and high reliability GaN power devices that can be widely used in diverse applications including portable devices, mobile phones, chargers and adapters, electric vehicles (EV) and automotive. For more information, please visit www.innoscience.com.
Contact Media:
Denis Marcon, Innoscience
denismarcon@innoscience.com
+32 471 13 88 22
Benoit Simoneau, 514 Media
benoit@514-media.com
+44 (0) 7891 920 370
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