ISES EU Power conference, 14th/15th of September 2023, Regina Palace Hotel, Lago Maggiore, Italy
06th September 2023 – Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has announced that Dr Denis Marcon, General Manager, Innoscience Europe will address the audience at the International Semiconductor Executive Summit EU (ISES EU) Power conference with a paper entitled: ‘Mass manufacturing 8-inch GaN-on-Si power devices: the next generation of power switching technology’.
Running on the 14th and 15th of September 2023 at the Regina Palace Hotel, Lago Maggiore, Italy, the ISES EU Power conference, like other ISES events, will bring together political, business, financial, research, industry leaders, and decision makers under one roof with the aim of supporting the growth of the semiconductor industry by promoting collaboration amongst its trusted network, and uniting semiconductor companies facing common challenges.
Speaking on the second day, September 15th, at 09:40-10:00, Dr. Marcon will address ‘several myths’ concerning GaN power devices - that they are very expensive and that their reliability is questionable – which have made several companies nervous about moving into GaN. In this presentation, Marcon will destroy these untruths by showing the performance and reliability of Innoscience’s GaN power device technology. He will also show that by leveraging the economies of scale delivered by the company’s two large 8-inch high-throughput manufacturing fabs that are totally dedicated to the production of 8-inch GaN-on-Si wafers (which each enable approximately twice the number of devices per wafer than 6-inch processes), it is now possible to provide price-competitive GaN power devices. He will conclude the presentation by showing how to take advantage of Innoscience’s discrete (InnoGaN™) and integrated (SolidGaN™) GaN power devices to enhance the performance of power converters.
Commented Dr Denis Marcon, Innoscience’s General Manager, Europe: “GaN power devices are revolutionizing the power semiconductor sector by enabling power conversion systems (AC/DC, DC/DC etc.) to be smaller, more efficient, simpler and thus cheaper than ones made with traditional silicon power devices. To date, Innoscience – the largest producer of 8-inch GaN-on-Si power devices wafers - has shipped more than 300M devices that are being successfully used in numerous applications, bringing significant benefits to the customer.”
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About Innoscience
Innoscience is an Integrated Device Manufacturer (IDM) founded in December 2015 with investment from venture capitals from the world. With the development of new technologies, the electric power grid and power electronic systems across the world are undergoing a massive transformation. Our vision is to create an energy ecosystem with effective and low-cost Gallium-Nitride-on-Silicon (GaN-on-Si) power solutions. In November 2017, Innoscience first established a mass production 8-inch wafer line for GaN-on-Si devices. As a cutting-edge GaN technology provider, Innoscience’s 1,400+ employees and over 300 R&D experts are dedicated to delivering high performance and high reliability GaN power devices that can be widely used in diverse applications including cloud computing, electric vehicles (EV) and automotive, portable devices, mobile phones, chargers and adapters. For more information, please visit www.innoscience.com.
Contact Media:
Denis Marcon, Innoscience
denismarcon@innoscience.com
+32 471 13 88 22
Benoit Simoneau, 514 Media
benoit@514-media.com
+44 (0) 7891 920 370
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