World's largest 8-inch GaN-on-Si HEMT manufacturer offers both discrete and newly introduced integrated half-bridge and driver solutions enabling customers to optimize for size, cost, flexibility and performance
March 20th, 2023 – Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, today launched the first in a new family of SolidGaN integrated GaN devices. ISG3201 is a complete half-bridge circuit including two 100V 3.2mΩ InnoGaN HEMTs and the required driver circuitry in an LGA package measuring just 5x6.5x1.1mm.
Explains Yi Sun, general manager of Innoscience America and Senior VP: “Innoscience is now offering designers a choice between the ultimate flexibility of using a discrete solution, and this new integrated approach which is very compact and simple to use and soldering and simplifying the power stage layout”.
The ISG3201 SolidGaN half-bridge comprises two 100V 3.2mΩ e-mode GaN HEMTs with driver, driving resistor, bootstrap and Vcc capacitors. It has a 34A continuous current capability, zero reverse recovery charge and ultra-low on resistance. Thanks to the high level of integration, gate loop and power loop parasitics are kept below 1nH. As a result, voltage spikes on switching nodes are minimized. The Turn-On speed of the half-bridge GaN HEMTs can be adjusted using a single resistor.
ISG3201 is suitable for high frequency Buck converters, half-bridge or full-bridge converters, Class D audio amplifiers, LLC converters and power modules. Overall, the integrated ISG3201 solution can save up to 20% PCB space on discrete GaN designs and 73% board space on traditional silicon implementations.
Adds Dr Pengju Kong, VP of Product Design Engineering at Innoscience: “The ISG3201 half-bridge device is the first in a whole family of SolidGaN integrated GaN-based solutions that Innoscience plans to launch this year, including further half-bridge circuits with different voltage ratings. Innoscience aims to offer engineers exactly what they want – integrated solutions or discrete devices – enabling them to achieve the best possible result for their design, minimizing development time and reducing cost.”
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About Innoscience
Innoscience is an Integrated Device Manufacturer (IDM) founded in December 2015 with investment from venture capitals from the world. With the development of new technologies, the electric power grid and power electronic systems across the world are undergoing a massive transformation. Our vision is to create an energy ecosystem with effective and low-cost Gallium-Nitride-on-Silicon (GaN-on-Si) power solutions. In November 2017, Innoscience first established a mass production 8-inch wafer line for GaN-on-Si devices. As a cutting-edge GaN technology provider, Innoscience’s 1,400+ employees and over 300 R&D experts are dedicated to delivering high performance and high reliability GaN power devices that can be widely used in diverse applications including cloud computing, electric vehicles (EV) and automotive, portable devices, mobile phones, chargers and adapters. For more information, please visit www.innoscience.com.
Contact Media:
Denis Marcon, Innoscience
denismarcon@innoscience.com
+32 471 13 88 22
Benoit Simoneau, 514 Media
benoit@514-media.com
+44 (0) 7891 920 370
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