Innoscience unveils 140W power supply design using high- and low-voltage GaN switches to deliver class-leading power density and efficiency

More than 2% efficiency gains achieved by using GaN everywhere in the design; Only Innoscience can mass-produce both high- and low-voltage 8-inch GaN-on-Si devices

Tuesday, March 22, 2022 – Innoscience Technology, the company founded to create a global energy ecosystem based on high performance, low-cost gallium nitride on silicon (GaN-on-Si) power solutions, today announced a new ultra-high-density 140W power supply demo that uses the company's high- and low-voltage GaN HEMT devices to achieve efficiencies of over 95% (230VAC; 5V/28A). Measuring just 60x60x22mm (2.4x2.4x0.9in) the PSU has a class-leading power density of 1.76W/cm³ (29W/in³).

Dr. Denis Marcon, General Manager of Innoscience Europe and Marketing Manager for the USA and Europe, explained: "By using GaN switches for both the high- and low-voltage functions on this design, we are maximizing efficiency rather than compromising it with lossy silicon devices. This is possible thanks to Innoscience's cost-effective and high-volume manufacturing processes and capabilities."

The 140W 300kHz AC/DC adapter uses a CRM Totem Pole PFC + AHB topology. It features Innoscience's INN650DA140A, a 650V /140mΩ GaN HEMT in the 5x6mm DFN package, for switches S1 and S2, the 650V/240mΩ, 8x8mm DFN-packaged INN650D240A for S3, and the INN650DA240A, a 5x6mm DFN 650V/240mΩ device for S4. S5 and S6 are delivered by the INN150LA070A, a 150V/7mΩ, 2.2x3.2mm LGA part within Innoscience's low-voltage GaN HEMT range.

Yi Sun, General Manager of Innoscience America and Sr VP of Product and Engineering adds: "This design, which targets USB PD3.1 notebooks and power tools, is a full 2% more efficient than silicon designs; this proves what can be achieved if GaN FETs are used everywhere, even in a relatively simple design."

Founded in December 2015, Innoscience is the only IDM company in the world that can mass-produce both high- and low-voltage GaN devices. Innoscience has its own normally-off, single-die technology and has industry's largest 8in wafer GaN-on-Si production capacity. In the consumer market, fast charging products have led the adoption of GaN technology. Today, many other markets are also starting to use GaN, accelerating Innoscience's growth.

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About Innoscience

Innoscience is an Integrated Device Manufacturer (IDM) founded in December 2015 with investment from venture capitals from the world. With the development of new technologies, the electric power grid and power electronic systems across the world are undergoing a massive transformation. Our vision is to create an energy ecosystem with effective and low-cost Gallium-Nitride-on-Silicon (GaN-on-Si) power solutions. In November 2017, Innoscience first established a mass production 8-inch wafer line for GaN-on-Si devices. As a cutting-edge GaN technology provider, Innoscience’s 1,400+ employees and over 300 R&D experts are dedicated to delivering high performance and high reliability GaN power devices that can be widely used in diverse applications including cloud computing, electric vehicles (EV) and automotive, portable devices, mobile phones, chargers and adapters. For more information, please visit www.innoscience.com. 

Contact Media:  

Peter Rogerson, Innoscience

peterrogerson@innoscience.com

+1 408-502-4626

Benoit Simoneau, 514 Media

benoit@514-media.com

+44 (0) 7891 920 370